Mg2+掺杂Zn2SiO4:Mn2+的溶胶-凝胶法合成及真空紫外发光特性研究

采用溶胶-凝胶法（sol-gel method）于不同气氛条件下成功合成了Zn_1.92-xMg_xSiO₄:0.08Mn²⁺（0≤x≤0.12）系列粉末样品.利用X射线衍射(XRD)、光致发光(PL)谱等分析手段对Zn_1.92-xMg_xSiO₄:0.08Mn²⁺系列     

Nd掺杂对Bi4Ti3O12铁电薄膜的微结构和铁电性能的影响

利用溶胶-凝胶法在Pt/Ti/SiO₂/Si(100)衬底上制备了Nd掺杂Bi₄Ti₃O₁₂(Bi_4-xNd_xTi₃O₁₂, x=0.00,0.30,0.45,0.75,0.85,1.00,1.50)铁电薄膜样品.研究了Nd掺杂对Bi₄Ti₃O₁₂薄膜的微结构和铁电性能的影响.研究结果表明:Nd掺杂未改变Bi₄Ti₃O₁₂薄膜的基本晶体结构.在掺杂量x<0.45时,Nd³⁺只取代类钙钛矿层中的A位Bi³⁺.当x=0.45时,样品剩余极化强度达最大值,在270kV·cm^-1的电场下为32.7μC·cm^-2.掺杂量进一步增加时,结构无序度开始明显增大,Nd³⁺开始进入(Bi₂O₂)²⁺层,削弱其绝缘层和空间电荷库的作用,导致材料剩余极化逐渐下降.当掺杂量x达到1.50时,掺杂离子最终破坏(Bi₂O₂)²⁺层的结构,材料发生铁电-顺电相变.     

Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN_x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN_x interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm²/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiN_x interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.     

矩形截面多量子阱脊形波导模式特性

本文根据多量子阱双折射率的性质,运用有效折射率法分析了矩形截面多量子阱脊形波导E_mn^x模和模E_mn^y的模式特性。     

Tb1－xDyxFe2－y-Fe掺杂BaTiO3多层膜中的磁电耦合

用溶胶-凝胶法制备了Fe掺杂BaTiO₃粉体，在1350℃下烧结成圆片状多晶样品，并与Tb_1-xDy_xFe_2-y胶合成磁电(ME)双层膜或三层膜.实验分析表明Fe：BaTiO₃依然是四方相钙钛矿结构，但是居里温度及相变潜热均略低于纯净BaTiO₃.研究了Tb_1-xDy_xFe_2-y-Fe∶BaTiO₃双层膜和Tb_1-xDy_xFe_2-y-Fe∶BaTiO₃-Tb_1-xDy_xFe_2-y三层膜的ME效应.在2.8×10⁴A/m的磁场下，两者的横向ME电压系数均达其峰值，分别为6.225和26.25mV·(A·m^-1)^-1·cm^-1.并且，用掺杂BaTiO₃制备的双层膜和三层膜的横向ME电压系数均为相同条件下用纯净BaTiO₃制备的双层膜和三层膜的横向ME电压系数的1.5倍.另外由于不含铅，锆等有害物质，符合环保要求，因此采用掺杂BaTiO₃制备的磁电效应器件具有深入研究和应用价值.     

高功率激光宽光谱减反膜的溶胶-凝胶旋转法制备工艺

 采用溶胶-凝胶法用旋转镀膜工艺在K9玻璃基片上制备出了SiO₂和有机硅单层减反膜以及有机硅-SiO₂双层减反膜。考察了旋转速度对SiO₂和有机硅单层膜的中心透射波长、膜层折射率等基本光学性质的影响，实验确定了双层膜的涂敷工艺。透射光谱测量表明，采用本文工艺条件制备的有机硅 SiO₂双层膜在430～800nm范围内透射率达99％以上。     

共轭低聚物中光生分子间电荷转移态的第一性原理研究

本文基于第一性原理中的Heyd-Scuseria-Ernzerh方法研究了单层In_1-xGa_xN的电子结构和光学性质.计算得到单层In_1-xGa_xN的能带结构和态密度（DOS）,发现随着掺杂比例的变化,体系带隙的变化范围是1.8~3.8 eV,表明通过Ga的掺杂可以实现体系带隙值的调节.并且还研究了单层In_1-xGa_xN的介电函数,折射率和吸收系数等光学性质,结果表明随着Ga掺杂浓度的增加,介电函数谱的主峰和吸收谱发生了显著的蓝移.此外,基于能带结构和态密度图谱,对单层In_1-xGa_xN的光学性质进行分析,预测这种材料独特的光学性质在纳米电子学和光学器件中会有广泛的应用.     

SiO2分子的基态(X1A1)结构与分析势能函数

应用群论及原子分子反应静力学方法推导了SiO₂分子的电子态及其离解极限，采用B3P86方法，在6-311G^**水平上,优化出SiO₂基态分子稳定构型为单重态的C_2V构型，其平衡核间距R_e=R_Si—O=0.1587 nm,∠OSiO＝111.2°,能量为-440.4392 a.u..同时计算出基态的简正振动频率:对称伸缩振动频率ν(B₂)=945.4cm^-1，弯曲振动频率ν(A₁)=273.5 cm^-1和反对称伸缩振动频率ν(A₁)=1362.9cm^-1.在此基础上，使用多体项展式理论方法，导出了基态SiO₂分子的全空间解析势能函数，该势能函数准确再现了SiO₂(C_2V)平衡结构.     

Sr和Ba替代对Eu掺杂Ca2.955Si2O7的结构和发光特性的影响研究

利用固相反应法制备了Sr和Ba替代的Ca_2.955-xM_xSi₂O₇: 0.045Eu²⁺ (M= Sr, Ba, x= 0.1-0.5)系列荧光粉, 利用较大离子半径的Sr和Ba元素替代Eu掺杂Ca_2.955-xM_xSi₂O₇ 中的Ca元素,研究Sr和Ba替代对样品结构和发光特性的影响. X射线衍射测试结果表明,少量Sr和Ba替代不会改变基质的晶体结构, 样品仍然为单斜晶系.未替代前, Ca_2.955Si₂O₇: 0.045Eu²⁺ 样品的发射峰在574 nm左右,随着Sr含量的增加,样品的发射峰发生蓝移; 而Ba含量在x= 0.1-0.4时不会引起发射峰位置的移动, 但x= 0.5样品的发射峰发生蓝移.同等含量的Sr和Ba部分替代样品中的Ca元素, Ba替代样品的光谱强度较强.     

层状钙钛矿La1.3Sr1.7Mn2-xCuxO7的磁性及电特性

通过固相反应烧结法成功制备了层状钙钛矿La_1.3Sr_1.7Mn_2-xCu_xO₇多晶，主要研究了其磁电特性.结果表明，样品为Sr₃Ti₂O₇型钙钛矿结构.随着温度的降低，其磁性经历了一个很复杂的转变过程.当x=0时，在T^*=231K出现二维短程铁磁有序，在<     

Electrical and optical properties of Si-doped indium tin oxides as transparent electrode and anti-reflection coating for solar cells

We have studied the electrical and optical properties of Si-doped indium tin oxides (ITSOs) as transparent electrodes and anti-reflection coatings for Si-based solar cells. The ITSO thin films were obtained by co-sputtering of ITO and SiO₂ targets under target power control. The resistivity of the ITSO thin films deposited at 0.625 in terms of power ratio (ITO/SiO₂) were 391 Ωcm. In this condition, the ITSO thin films showed very high resistivity compared to sputted pure ITO thin films (1.08 × 10⁻³ Ωcm). However, refractive index of ITSO thin films deposited at the same condition at 500 nm is somewhat lowered to 1.97 compared to ITO thin films (2.06). The fabricated graded refractive index AR coatings using ITO, ITSO, and SiO₂ thin films kept over 80% of transmittance regardless of their thickness varing from 97 nm to 1196 nm because of their low extinction coefficient. As the AR coating with graded refractive indices using ITO, ITSO, and SiO₂ layers was applied to general silicon-based solar cell, the current level increased nearly twice more than that of bare silicon solar cell without AR coating.     

Preparation of sol-gel ZrO2-SiO2 highly reflective multilayer films and laser-induced damage threshold characteristic

Sol-gel (ZrO₂/SiO₂)¹² ZrO₂ films were prepared by spin coating method. The reflectivity spectrum of the films was measured with a Lambda 900 spectrometer. In order to investigate laser-induced damage threshold (LIDT) characteristic of highly reflective films, one-layer ZrO₂ and SiO₂ films, two-layer ZrO₂/SiO₂ and SiO₂/ZrO₂ films were also prepared by spin coating method. LIDT of each film was measured. Damage morphology after laser irradiation was characterized by optical microscopy (Nikon E600K). The experimental results showed that the reflectivity of (ZrO₂/SiO₂)¹² ZrO₂ film at 1064 nm and 355 nm wavelength is 99.7%. The LIDT results decreases as the number of layer of films increases. All the films have similar damage morphology. The experimental results are explained by the different temperature profiles of the films.     

Structural evolution of SiNx films deposited by ECR and its light emission

Structural and optical properties of a-SiN_x films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) have been investigated. The Fourier transform infrared (FTIR) spectroscopy shows the structural evolution of the SiN_x films, which are defined as Si-rich SiN_x and N-rich SiN_x films, also confirmed by Raman spectroscopy. The origin of the light emission for SiN_x films may be attributed to two mechanisms, i.e., quantum confinement effect (QCE) and transition of defect energy levels. The correlation between light emission and structures of SiN_x films is discussed.     

Enhanced rear‐side reflection and firing‐stable surface passivation of silicon solar cells with capping polymer films

Low refractive index polymer materials have been investigated with a view to form the back surface mirror of advanced silicon solar cells. SiO_x:H or AlO_y SiO_x:H polymer films were spun on top of an ultra‐thin (<10 nm) atomic‐layer‐deposited (ALD) Al₂O₃ layer, itself deposited on low‐resistivity (1 Ω cm) p‐type crystalline silicon wafers. These double‐layer stacks were compared to both ALD Al₂O₃ single layers and ALD Al₂O₃/plasma‐enhanced chemical vapour deposited (PECVD) SiN_x stacks, in terms of surface passivation, firing stability and rear‐side reflection. Very low surface recombination velocity (SRV) values approaching 3 cm/s were achieved with ALD Al₂O₃ layers in the 4–8 nm range. Whilst the surface passivation of the single ALD Al₂O₃ layer is maintained after a standard firing step typical of screen printing metallisation, a harsher firing regime revealed an enhanced thermal stability of the ALD Al₂O₃/SiO_x:H and ALD Al₂O₃/AlO_y SiO_x:H stacks. Using simple two‐dimensional optical modelling of rear‐side reflection it is shown that the low refractive index exhibited by SiO_x:H and AlO_y SiO_x:H results in superior optical performance as compared to PECVD SiN_x, with gains in photogenerated current of ～0.125 mA/cm² at a capping thickness of 100 nm. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Dispersive optical constants of a-Se100−xSbx films

Thin films of amorphous Se_100−xSb_x (x=5,10 and 20 at%) system are deposited on a silicon substrate at room temperature (300 K) by thermal evaporation technique. The optical constant such as refractive index (n) has been determined by a method based on the envelope curves of the optical transmission spectrum at normal incidence by a Swanpoel method. The oscillator energy (E_o), dispersion energy (E_d) and other parameters have been determined by the Wemple–DiDomenico method. The absorption coefficient (α) has been determined from the reflectivity and transmitivity spectrum in the range 300–2500 nm. The optical-absorption data indicate that the absorption mechanism is a non-direct transition. We found that the optical band gap, E_g^opt, decreases from 1.66±0.01 to 1.35±0.01 eV with increase Sb content.     

不同气氛下SiOx纳米线的制备及形貌、红外、光致发光研究

以N₂/H₂、N₂或NH₃为载气,利用碳辅助化学气相沉积法,常压1140℃下在石英衬底上制备了大量直径为20—300 nm,长数百微米的非晶SiO_x纳米线.制备得到的纳米线具有高度定向生长的特性.利用透射电子显微镜、扫描电子显微镜及电子能谱对SiO_x纳米线的形貌及组分进行了分析,Si与O原子之比为1∶18.傅里叶红外吸收谱显示了非晶氧化硅的三个特征峰（482,806和1095 cm^-1）及1132 cm^-1无序氧化硅结构的强吸收峰.SiO_x纳米线光致发光光谱（PL）在440 nm（283 eV）处具有较强的荧光峰;N₂为载气生长的SiO_x纳米线的PL峰强比NH₃为载气生长的SiO_x纳米线峰强大四个数量级. 关键词： x纳米线')" href="#">SiO_x纳米线 碳辅助化学气相沉积法 傅里叶红外吸收 光致发光     

沉积参数对SiNx薄膜结构及阻透性能的影响

利用直流脉冲磁控溅射法在室温下制备无氢SiN_x薄膜.通过傅里叶变换红外光谱、台阶仪、紫外—可见分光光度计、接触角测量仪、透湿测试仪等表征技术,分析了N₂流量、Si靶溅射功率等实验参数对SiN_x薄膜成分、结构、及阻透性能、透光性能、接触角等性能的影响.研究结果表明,Si靶溅射功率固定时,在低N₂流量条件下,或N₂流量固定时,在高Si靶溅射功率条件下,制备的SiN _{关键词： x}')" href="#">SiN_x 磁控溅射 微观结构 阻透性能     

金属有机分解法制备的SrTiO3薄膜的光学特性

采用金属有机分解法（MOD）在石英衬底上沉积了SrTiO3薄膜。所制备的薄膜是晶格常数为a=b=c=3.90?的多晶结构。通过测量190—1100nm波段内的透射光谱，采用包络方法计算了薄膜的光学常数（折射率n和消光系数k）。结果表明，采用MOD方法制备的薄膜的折射率大于采用射频磁控溅射、溶胶—凝胶和化学气相沉积方法制备的薄膜的折射率；薄膜的折射率色散关系满足单振子模型，其中振子强度S0为0.88′1014m-2，振子能量E0为6.40eV；薄膜的禁带宽度为3.68eV。     

Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices

Structures containing silicon nanocrystals (nc-Si) are very promising for Si-based light-emitting devices. Using a technology compatible with that of silicon, a broader wavelength range of the emitted photoluminescence (PL) was obtained with nc-Si/SiO₂ multilayer structures. The main characteristic of these structures is that both layers are light emitters. In this study we report results on a series of nc-Si/SiO₂ multilayer periods deposited on 200 nm thermal oxide SiO₂/Si substrate. Each period contains around 10 nm silicon thin films obtained by low-pressure chemical vapour deposition at T=625°C and 100 nmSiO₂ obtained by atmospheric pressure chemical vapour deposition T=400°C. Optical and microstructural properties of the multilayer structures have been studied by spectroscopic ellipsometry (using the Bruggemann effective medium approximation model for multilayer and multicomponent films), FTIR and UV–visible reflectance spectroscopy. IR spectroscopy revealed the presence of SiO_x structural entities in each nc-Si/SiO₂ interface. Investigation of the PL spectra (using continuous wave-CW 325 nm and pulsed 266 nm laser excitation) has shown several peaks at 1.7, 2, 2.3, 2.7, 3.2 and 3.7 eV, associated with the PL centres in SiO₂, nc-Si and Si–SiO₂ interface. Their contribution to the PL spectra depends on the number of layers in the stack.     

Optical and gas sensing properties of thick TiO2 films grown by laser deposition

In this work the optical and the gas sensing properties of thick TiO₂ waveguide films, produced by pulsed laser deposition, were investigated by m-line spectroscopy. The films were deposited on (0 0 1) SiO₂ substrates at temperature of 100 °C. The thickness of the films was measured to be in the range from 650 to 1900 nm and the roughness increases from 5 to 14.6 nm. High quality mode spectra, consisted of thin and bright TE and TM modes, were observed in the films with thickness up to 1200 nm. All the films revealed anisotropic optical properties. Gas sensitivity of the films to CO₂ was examined at room temperature on the basis of the variations of the refractive index. CO₂ concentration of 3 × 10⁴ ppm was detected, which corresponds to a refractive index variation of about 1 × 10⁻⁴. The crystal structure and the optical transmittance of the films were also presented and discussed.