存储器用铁电薄膜及电极材料的研究

铁电体独特的自发电极化双稳性质和非线性光学性质使其在光电子器件中得到广泛应用.为了实现器件的小型化和与微电子、光电子工艺兼容,铁电薄膜已成为一个研究热点.自发电极化的大小和取向以及外电场、缺陷和铁电薄膜/电极界面与自发电极化的交互作用决定了铁电薄膜的性质和服役行为.文章以铁电存储器和光电子器件应用为背景,选择了具有重大应用前景的Bi4-xLaxTi3O12（BLT）、SrBi2Ta2O9（SBT）、PbZrxTi1-xO3（PZT）和LiNbO3(LN)铁电薄膜以及相关的 La(Sr,Co)O3 (LSCO) 和LaNiO3(LNO)等电极材料为研究对象,研究了缺陷电荷和电畴的交互作用和它们在交变外电场中的动力学行为,探明了铁电薄膜疲劳现象的物理本质;从晶格结构与缺陷的观察研究入手,探索了材料铁电性质的起源和优化材料铁电性质的途径;从铁电薄膜/电极界面结构与性质的研究入手,寻找更有效、更稳定的电极材料与结构,从而为器件应用打下了基础;在研究外电场对铁电薄膜生长机制影响的基础上,找到了利用外电场调控铁电薄膜结构的新途径,发展了新的、与半导体器件和光电子器件工艺兼容的制膜方法.     

铁电薄膜底电极对薄膜结构与电性能的影响

研究了电极材料（Ｐｔ／Ｔｉ）对铁电ＰＬＺＴ（７．５／６５／３５）陶瓷薄膜结构和性能的影响．认为在Ｐｔ层厚度一定时，Ｔｉ层的厚度对铁电薄膜的结构和性能有显著影响．当Ｔｉ层过厚或过薄时，铁电薄膜的结构较差；而当Ｔｉ层的厚度适中时，则铁电薄膜的显向下微结构均匀，电性能较好，典型的剩余极化强度和矫顽场分别为２７．８μＣ·ｃｍ^-2和６５．１ｋＶ·ｃｍ^-1． 关键词：     

铁电薄膜性能测量实验

利用铁电性能综合测试系统测量了SrBi2Ta2O9薄膜的铁电性能,分析了电压变化对于电滞回线的影响,同时对疲劳行为进行了研究。     

铁电薄膜存贮器及其疲劳机制的研究和进展

主要讨论了铁电薄膜用于研制铁电存贮器的进展情况，探讨了目前围绕电级，空间电荷，畴钉扎，应力和微结构等几个方面对铁电薄膜贮存器疲劳特性的影响，论述了铁电薄膜存贮器的研究现状和存在的一些问题。     

新型电极材料Sb掺杂BaSnO_3薄膜的外延生长及其在铁电薄膜电容器中的应用

本文利用脉冲激光沉积技术在SrTiO_3单晶衬底上生长了Sb掺杂BaSnO_3(BSSO)外延薄膜.结构和输运性质测量结果显示BSSO薄膜是一种具有立方钙钛矿结构导电性很好的薄膜材料,80K时呈现金属绝缘体转变,室温下薄膜的电阻率、载流子浓度和迁移率分别为ρ=2.43 mΩcm,n=1.65×1021 cm~(-3)和μ=1.75 cm~2/Vs.以BSSO薄膜为底电极制备了具有比较好电滞回线的Pb(Zr_(0.52)Ti_(0.48))O_3和Bi(Mn_(0.05)Fe_(0.95))O_3铁电电容器,表明BSSO薄膜是一种具有应用前景的新型电极材料.     

Si掺杂HfO_2薄膜的铁电和反铁电性质

通过改变Si掺杂量制备出了具有显著铁电和反铁电特征的HfO2纳米薄膜,对其电滞回线、电容-电压和漏电流-电压特性以及物相温度稳定性进行了对比研究.反铁电薄膜的介电系数大于铁电薄膜,在电场加载和减载过程中发生的可逆反铁电-铁电相变导致了双电滞回线的出现,在室温至185℃的测试温度范围内未出现反铁电→顺电相变.在电流-电压特性测量时观察到的负微分电阻效应归因于极化弛豫等慢响应机理的贡献.     

铁电薄膜、多层膜及异质结构研究

综述了铁电薄膜,多层膜和异质结构研究的新进展,分析了铁电薄膜不同制备方法的优缺点,重点介绍了铁电薄膜在铁电存储器,微电子机械系统及热释电红外探测器方面的应用,指出了目前铁电薄膜及器件设计研究需要重点解决一些问题。     

铁电薄膜的制备，表征和应用

概括介绍了铁电薄膜的发展过程，分析了不同制备方法的优缺点，指出在制备中需要考虑的主要问题，给出了铁电薄膜基本参数、 物化结构性能、物理性质等的表征方法，讨论了铁电薄膜在热释电探测、光开关、随机存取存储器等方面的应用，最后简单介绍了我国有关单位铁电薄膜的研究情况。     

不同方法测铁电材料的居里温度

1铁电材料的居里温度及其特性 铁电材料的一些性质总是随温度的变化而变化,而且都有一个临界温度Tc,当超过临界温度时,晶体的分子结构发生变化,自发极化消失,没有铁电性,我们称这个点为居里点,这个温度为居里温度．     

应力对铋系铁电薄膜性能影响的研究进展

应力普遍存在于铁电薄膜中,是影响薄膜性能和薄膜电子器件可靠性的一个重要参数.本文系统介绍了本小组近年来所进行的应力对铋系铁电薄膜(Bi3.25La0.75Ti3O12,Bi3.15Nd0.85Ti3O12 和SrBi2Ta2O9)的铁电性能及与铁电存储有关的开关、疲劳性能等影响的研究.结果表明:张应力有利于增大薄膜的剩余极化和开关电荷量,而压应力却使得两者都降低.还发现:应力对薄膜的开关时间、矫顽场、疲劳性能等都有影响.其结果都与“应力作用下薄膜内铁电畴的重新取向“有关.     

重温Pb(ZrxTi1-x)O3铁电薄膜极化疲劳问题

具有ABO3型钙钛矿结构的Pb(ZrxTi1-x)O3 (PZT)展示出良好的铁电极化性能,是使用最广的铁电材料.然而,在将它应用于铁电存储时,PZT薄膜遭遇到极化疲劳问题而被SrBi2Ta2O9 (SBT)等铁电体所替代,这一问题至今未能得到妥善解决.文章首先通过变温极化疲劳实验充分理解PZT极化疲劳的基本过程,然后有针对性地进行材料设计,获得基本无极化疲劳的PZT铁电薄膜.     

Phase transitions and domain structures in thin ferroelectric films

Recent advances in technology made available high quality thin ferroelectric films and ferroelectric–paraelectric multilayers. But understanding of the properties of these systems is far from being complete. In particular, it is not clear why various anomalies observed at phase transitions here are different from those in high quality bulk systems. The aim of the paper is to discuss some specific features of ferroelectric phase transitions in thin films and multilayers which are taken into account only partially by the theory. The discussion is limited to revealing the character of ferroelectric state forming just after the transition, i.e. if it is single-domain or multi-domain, if it is single-phase or two-phase. First, thin films with electrodes and on a substrate are discussed. The role of non-ideality of electrodes in realization of one of the first pairs of possibilities is emphasized. A more recent idea is that even for ideal electrodes a domain formation is possible when some conditions on the electrode–ferroelectric interface and the material constants of the material are met. This seems to be quite possible for the considered systems. Clamping by the substrate may lead to formation of a two-phase state which is practically unexplored for very thin films on substrates. Second, ferroelectric–paraelectric multilayers are considered which are more challenging for theoretical study than the thin films. Indeed, despite periodicity in the composition the domain structures are almost never periodic along the multilayer. The non-ideality of electrodes seems to lead to practical impossibility of single-domain ferroelectric phase transition in the multilayers of the considered type.     

基于二维结构薄膜的偏振选择相位光栅的研究

利用二维结构薄膜构建了具有偏振选择特性的新型相位光栅,借助严格耦合波分析(RCWA)方法计算了光栅各级衍射强度随入射光波长及入射角的变化,发现在垂直入射情况下,波长600—640 nm范围内,相位光栅对横向电学(TE)模主要产生0级衍射,而对横向磁学(TM)模产生±1级衍射,在波长633nm处,0级衍射光的偏振消光比为109.8,±1级衍射光的偏振消光比为334.6.利用时域有限差分方法对这种相位光栅的偏振分束现象进行了模拟,偏振分离角在玻璃基板内可以达到10°左右,最后模拟了入射角为23°时光栅对不同偏     

ITO/Au/ITO multilayer thin films on transparent polycarbonate with enhanced EMI shielding properties

ITO/Au/ITO multilayer thin films were deposited onto polycarbonate substrate via magnetron sputtering technique without intentional heating. The deposition times of both ITO and Au layers were studied to optimize the overall transparency and conductivity. As-prepared thin films were characterized using X-ray diffraction analysis, secondary ion mass spectroscopy, scanning and transmission electron microscopy, atomic force microscopy and physical property measurement system. The optical measurement results revealed that the transmittance of the films were enhanced by increasing the gold deposition time up to 15 s. Beyond this point, further increasing the duration caused a decrease in optical transmittance. Upon optimization of the Au deposition time, the deposition duration of ITO layers was also studied to increase electromagnetic interference (EMI) shielding effectiveness (SE). Maximum EMI SE in this work was measured as 26.8 dB, yielding 99.8% power attenuation, which was verified by simulation results.     

Doped thin metal oxide films for catalytic gas sensors

TiO₂ and Pt doped TiO₂ thin films were grown by pulsed laser deposition on 〈0 0 1〉 SiO₂ substrates. The doped films were compared with undoped ones deposited in similar experimental conditions. An UV KrF* (λ = 248 nm, τ_FWHM ≅ 20 ns, ν = 2 Hz) excimer laser was used for the irradiation of the TiO₂ or Pt doped TiO₂ targets. The substrate temperatures were fixed during the growth of the thin films at values within the 300-500 °C range. The films’ surface morphology was investigated by atomic force microscopy and their crystalline quality by X-ray diffractometry. The corresponding transmission spectra were recorded with the aid of a double beam spectrophotometer in the spectral range of 400-1100 nm. No contaminants or Pt segregation were detected in the synthesized anatase phase TiO₂ thin films composition. Titania crystallites growth inhibition was observed with the increase of the dopant concentration. The average optical transmittance in the visible-infrared spectral range of the films is higher than 85%, which makes them suitable for sensor applications.     

Structural characterization and magnetoresistance of manganates thin films and Fe-doped manganates thin films

Perovskites thin films with the composition La_0.6Ca_0.4MnO₃ doped with 20% Fe, were prepared by pulsed reactive crossed beam laser ablation, where a synchronized reaction gas pulse interacts with the ablation plume. The films were grown on various substrates and the highest colossal magnetoresistance ratio (CMR) was detected by Hall measurements for films grown on LaAlO₃ (1 0 0), which was selected as substrate for further investigations.Several growth parameters, such as substrate temperature and target to substrate distance were varied to analyze their influence on the film properties.The structure of the deposited thin films was characterized by X-ray diffraction and atomic force microscope, while Rutherford backscattering (RBS) was used to determine the film stoichiometry. The electrical properties were determined by Hall effect measurements in a magnetic field of 0.51 T.These measurements reveal that the amplitude of the CMR ratio depends strongly on the substrate and that the oxygen content influences the temperature where the transition from semiconductor to metal is observed.     

纳米晶氧化锡薄膜的接触特性

在 Ar和 O2 气体中 ,基片温度在 15 0～ 40 0℃的条件下 ,用直流磁控溅射的方法可以制备纳米晶透明导电薄膜。实验利用 TL M模型测试了纳米晶 Sn O2 透明导电薄膜的方块电阻、单位面积薄膜的接触电阻和电极与薄膜的结合力随热处理温度的变化情况     

氧化钒薄膜的微结构及阻变特性研究

采用射频反应溅射法于室温下在Cu/Ti/SiO₂/Si基底上制备了氧化钒薄膜. X-射线衍射、X射线光电子能谱分析仪及原子力显微镜结果表明, 室温下制备的氧化钒薄膜除微弱的V₂O₅ (101)和V₂O₃ (110)峰外, 没有明显的结晶取向, 是VO₂, V₂O₅, V₂O₃及VO的混合相薄膜, 且薄膜表面颗粒大小均匀, 表面均方根粗糙度约为1 nm. 采用半导体参数分析仪对薄膜的电开关特性进行测试. 结果表明薄膜具有较低的开关电压(V_Set<1 V, V_Reset<-0.5 V), 并且具有稳定的可逆开关特性. 薄膜从低阻态转变为高阻态的电流(I_Reset)随限流的增大而增大.通过高低阻态时I-V对数曲线的拟合(高阻态斜率>1, 低阻态斜率=1), 认为Cu离子在薄膜中扩散形成的导电细丝是该体系发生电阻转变的主要机制. 关键词： 氧化钒薄膜 电阻开关 电阻式非挥发存储器 导电细丝     

Cobalt and tantalum additions for enhanced electrochromic performances of nickel-based oxide thin films grown by pulsed laser deposition

Aiming at improving the durability of anodic electrochromic nickel oxide thin films, Ni-M-O (M = Co, Ta) thin films were grown by pulsed laser deposition (PLD), using optimized conditions, namely room temperature and 10⁻¹ mbar oxygen pressure. For low Co and Ta contents (<5%), both additions lead to a loss of the [1 1 1] preferred orientation of the NiO rock-salt structure followed by a film amorphization with increasing Ta amount. Among the two series of metal additions (M ≤ 20%), the Ni-Co-O (5% Co) and Ni-Ta-O (10% Ta) thin films show the highest electrochemical performances especially in respect of improved durability. If the enhanced properties are associated with a limited dissolution of the oxidized phase for the Ni-Ta-O system, the opposite trend is observed for the Ni-Co-O system as compared to pure NiO.