多孔硅的微结构与发光特性研究

利用原子力显微镜（AFM）和光致荧光（PL）光谱对一系列直流腐蚀和脉冲腐蚀的多孔硅的微结构及发光特性进行了对比研究．表面和侧面的AFM结果表明，多孔硅表面呈“小山”状，有许多小的、突出的硅颗粒．在相同的腐蚀条件（等效）下，脉冲腐蚀的样品表面Si颗粒更加尖锐、突出，侧面的线状结构更明显，多孔硅层更厚．对应的PL谱，脉冲腐蚀的样品发光更强．量子限制效应的理论可以比较成功地解释这个结果 关键词：     

多孔硅膜微结构的透射电镜研究

用透射电镜观察到由Ｓｉ（ｌｌｌ）衬底生长的多孔硅膜具有双层结构和明显的不均匀微结构，初步探讨了荧光机理与微结构的关系。     

多孔硅发光稳定性的改进

采用在热ＨＮＯ₃中对多孔度较低的多孔硅样品进行氧化的方法，我们获得了稳定性和均匀性都较好的多孔硅样品。这是一种不同于快速热氧化且更方便易行的方法。另外还用ＳＥＭ和ＦＴＩＲ对其特性进行了研究。 关键词：     

多孔硅蓝光发射与发光机制

在制备出光致发光能量为２．７ｅＶ的发射蓝光多孔硅的基础上对它进行了较系统的研究：测量了它的光致发光时间分辨光谱，用傅里叶交换红外光谱分析了其表面吸附原子的局域振动模，研究了γ射线辐照对其发光的影响，并与发红、黄光的多孔硅作了对比，通过空气中长期存放、激光和紫外线照射的方法，研究了光致发光峰能量为２．７ｅＶ的多孔硅发光稳定性．我们及其它文献中报道的多孔硅蓝光发射的实验结果与量子限制模型矛盾，但能用量子限制／发光中心模型解释．我们认为多孔硅的２．７ｅＶ发光是多孔硅中包裹纳米硅的ＳｉＯ_x层中某种特征发光中心引起的． 关键词：     

多孔硅结构与发光机理的非线性光学研究

最近的研究中,采用1.06μm超短脉冲光激发,在多孔硅表面观察到了有效的红外多光子激发的荧光发射.研究表明,这是一个增强的三阶非线性光学过程.本文利用其三阶非线性特性对具有强可见光发射的多孔硅结构进行了研究,结果显示晶体硅的各向异性特征在多孔硅中几乎被保留;此外,较强的激光激发导致的红外上转换荧光信号衰减过程被归结为与多孔硅表面氢的脱附有关.     

超声空化与声致发光

自然界中空化现象非常有趣。比如,有一种虾(叫卡达虾或枪虾)在遇到危险时,通过快速夹虾螯,发出声响以期吓退猎食者。这种声响有时很大,甚至大到扰乱水下声纳监听潜艇信号。这么大的声响不是虾螯互相碰撞发出的,而是虾螯闭合过程产生的微气泡发出的(图1)。如果学过流体的伯努利原理,我们知道流体快速流动导致压强降低,这也是飞机能飞的道理。快速夹螯,令其周围压强下降,微气泡自然膨胀。     

基于纳米压痕法的多孔硅硬度及杨氏模量与微观结构关系研究

采用电化学腐蚀制备多孔硅，利用场致发射扫描式电子显微镜(field emission scanning electron microscope，FESEM)观测多孔硅的二维微观形貌，利用Nano Indenter XP中的纳米轮廓扫描仪组件(nano profilometry, NP)得到其三维拓扑分析图像，分析了微观结构差异的原因并讨论了多孔硅内部微观结构对其机械性能的影响；利用MTS Nano Indenter XP纳米压入测量仪器，研究了多孔硅的显微硬度和杨氏模量随压入深度的变化规律，比较了不同孔隙率多孔硅的机械性能差别.实验结果测得40mA/cm²，60mA/cm²，80mA/cm²和100mA/cm²四个不同腐蚀电流密度条件下制备多孔硅样品的孔隙率在60%—80%范围内，孔隙率随着腐蚀电流密度的增加而增大；在氢氟酸(HF)浓度为20%的条件下制备出多孔硅样品的厚度在40μm—50μm范围内；测得多孔硅的平均硬度、平均杨氏模量分别在0.478GPa—1.171GPa和10.912GPa—17.15GPa范围内，并且其数值随腐蚀电流密度的增加而减小，在纳米硬度范围内随压入深度的增加而减小，在显微硬度范围内其数值保持相对恒定，分析了样品表面、厚度、微观结构，及环境对其机械性能的影响，得到了多孔硅力学性能随其微观尺度形貌的变化规律. 关键词： 多孔硅 微观结构 硬度 杨氏模量     

基片曲率法在多孔硅薄膜残余应力检测中的应用

通过基底曲率法设计和制作了一种测量薄膜应力的装置，它具有全场性、非接触性、高分辨率、无破坏、数据获取速度快等特点.使用该装置测量了电化学腐蚀法制作的多孔硅薄膜的残余应力，并研究了孔隙率和基底掺杂浓度对残余应力的影响，结果表明随着孔隙率的增加和硼离子掺杂浓度的提高，多孔硅表面的拉伸应力逐渐加大，由此表明多孔硅薄膜的微观结构与残余应力的大小有着密切的联系. 关键词： 薄膜 残余应力 孔隙率 多孔硅     

Current-voltage characteristics of structures with a porous silicon layer at adsorption of carbon monoxide

The current-voltage characteristics of structures with a layer of porous silicon of 73% porosity were measured at adsorption of gas (carbon monoxide) at room temperature. Estimations are performed of the height of potential heterobarrier at the interface between porous silicon and p ⁺-type single-crystal silicon, of the perfectness factor and the resistance of a layer of porous silicon in air, in air with 0.4% CO, and in air with 2% CO. Physical causes explaining the experimental data are discussed.     

电化学制备薄黑硅抗反射膜

采用计算机控制电流密度按指数规律衰减对单晶硅进行电化学腐蚀,得到了折射率随薄膜厚度连续均匀变化的抗反射膜,即黑硅样品. 这种在制取上快速、经济和工艺非常简单的样品,不仅在较宽波段范围内反射率小于5%,且整个薄膜厚度不足1μm. 利用传输矩阵方法对黑硅样品的反射谱进行模拟,得到了理论与实验符合较好的结果. 关键词： 多孔硅 折射率 抗反射膜 黑硅     

Characterization of porous silicon prepared by powder technology

In this study, we have proposed the powder technology as new method for preparation of bulk porous silicon. Formation of porous silicon by high-energy ball milling followed by pressing and sintering was studied by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy (XPS). A crystalline wafer with (1 1 1) orientation was extensively ball milled up to 72 h leading to a decrease in average crystallite size up to 15 nm. The most significant reduction of crystallite size was observed after milling process for about 24 h. The nanopowders were then pressed into pellets at a pressure up to 400 MPa and sintered at 1173 K for 60 min in a high purity argon atmosphere. Results showed that after sintering the material became porous with uniform porosity in whole volume, independently of the sinter size. It is not possible to prepare such porous materials using the conventional electrochemical etching, where the porous structure depth usually does not exceed tens of micrometers. Core-level XPS studies showed very good agreement between peak positions of the sintered porous silicon and in-situ prepared polycrystalline 20 nm-Si thin film or single-crystalline Si (1 1 1) wafer. Furthermore, the valence band spectra measured for sintered samples are broader compared to those measured for the Si (1 1 1) wafer or polycrystalline Si thin film. On the other hand, the shape and broadening of the valence bands measured for the sintered samples are in very good agreement with those reported for electrochemically prepared porous silicon.     

Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing

The early stages of hydrogenated nanocrystalline silicon (nc-Si:H) films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystals in the nc-Si:H films, the films were annealed by rapid thermal annealing (RTA) at different temperatures and then analysed by Raman spectroscopy. It was found that the recrystallization process of the film was optimal at around 1000℃. The effects of different RTA conditions on charge storage were characterized by capacitance--voltage measurement. Experimental results show that nc-Si:H films obtained by RTA have good charge storage characteristics for nonvolatile memory.     

基于多孔硅Bragg反射镜的液体浓度测量方法

提出了一种利用多孔硅Bragg反射镜(简称PSBR)的反射谱来测量液体浓度的新方法。当在PSBR的孔内浸入不同浓度的液体时,多孔硅的有效折射率会发生变化,从而引起PSBR反射谱峰位发生变化。利用脉冲腐蚀法制备PSBR,采用正交参数设计法优化实验参数。对其进行了浓度测量实验和验证实验,测量误差小于0.14%。     

Photoluminescence quenching of porous silicon by noble metal adsorbates

Ｐｈｏｔｏｌｕｍｉｎｅｓｃｅｎｃｅ ｑｕｅｎｃｈｉｎｇ ｏｆ ｐｏｒｏｕｓ ｓｉｌｉｃｏｎ ｂｙ ｎｏｂｌｅ ｍｅｔａｌ ａｄｓｏｒｂａｔｅｓ￥ＧＵＯＨｅｎｇｑｕｎ（ＤｅｐａｒｔｍｅｎｔｏｆＡｐｐｌｉｅｄＰｈｙｓｉｃｓ，ＨｕａｑｉａｏＵｎｉｙｅｒｓｉ...     

稀土掺杂多孔硅的蓝光发射

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Use of porous silicon for double- and triple-layer antireflection coatings in silicon photovoltaic converters

Reflectance spectrum calculations of double- and triple-layer antireflection coatings made of porous silicon layer are performed, using the optical matrix approach method. Obtained results are compared with the reflectance spectrum of other type antireflection coatings. Lower reflectance value of both double- and triple-layer antireflection coatings made of porous silicon is obtained in comparison to that of SiO₂/TiO₂ antireflection coating. These results can be used in photovoltaic converters.