介质球在点电荷电场中产生的电势分布规律

推证了介质球在点电荷电场中产生的电势分布规律;同时由此推出了当介质球的电容率ε→∞时,介质球在点电荷的电场中为等电势体,以及金属导体球在点电荷电场中产生的电势分布规律．     

Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT

A two-dimensional (2-D) analytical model for a Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been developed to demonstrate the unique attributes of this device structure in suppressing short channel effects (SCEs). The model accurately predicts the channel potential, electric field variation along the channel, and sub-threshold drain current, taking into account the effect of lengths of the two gate metals, their work functions, barrier layer thicknesses, and applied drain biases. It is seen that the SCEs and hot carrier effects in DMG AlGaN/GaN HEMT are suppressed due to the work function difference of the two metal gates, thereby screening the drain potential variations by the gate near the drain. Besides, a more uniform electric field along the channel leads to improved carrier transport efficiency. The accuracy of the results obtained from our analytical model has been verified using ATLAS device simulations.     

线电荷与介质圆柱所形成的电场

在线电荷电场的电势调和展开式的基础上,得出线电荷电场内存在介质圆柱时电势的级数解.并以此来分析长直线电荷与介质圆柱所形成的电场的电像,从而给出电势与电像有关的解析表达式,进一步得出等势线(面)与电场线方程,并利用软件MATLAB绘制出电场线和等势线图予以验证.     

一种考虑IGBT基区载流子注入条件的物理模型

提出了一种考虑绝缘栅极双极晶体管(insulated gate bipolar transistor,IGBT) 基区载流子不同注入条件的物理模型. 在小注入和大注入情况下,分别建立描述IGBT基区载流子运动的输运方程(ambipolar transport equation,ATE),并确定边界条件. 采用傅里叶级数法求解载流子输运方程,并将计算结果分别与IGBT手册提供的实验数据和Hefner模型计算结果相比较,验证了本文提出物理模型的正确性. 关键词： 绝缘栅极双极晶体管 物理模型 注入条件 双极输运方程     

On the intrinsic quadrupole electric field of a centrosymmetric dielectric

In agreement with a prediction of the theory, we have observed experimentally the intrinsic quadrupole electric field of a centrosymmetric crystal. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 1, 15–20 (10 January 1998)     

Self-consistent electric field arising on mechanical perturbation of a dielectric

The electric field arising in rock on disruption is considered. The minimum crack concentration necessary for intense radiation is determined. It is shown that the field strength at this concentration is proportional to the ratio between the statistical temperature of the dipole system and the dipole moment.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 71–74, May, 1977.     

用电介质镜像法计算线电荷与介质圆柱所形成的电场

利用电介质镜像法计算线电荷与介质圆柱体所形成的电场,给出电势与场强的解析表达式,进一步得出等势线与电场线方程,并利用软件MATLAB绘制出电场线和等势线(面)图予以验证.     

A statistical model of the electrostatic field at a dielectric surface

A method is proposed for determination of electric-field intensity distribution on a plane over which charges of random magnitude and sign are distributed. The distribution functions for normal and tangent components of electric field intensity in this plane are obtained.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 95–99, June, 1975.     

Acoustic properties of a dielectric with cavities in a polarizing electric field

The effect of an external polarizing electric field on the shear wave propagation in a centrosymmetric crystal with electrostriction, whose body is penetrated with parallel cylindrical cavities (pores), is considered. The cavities are distributed throughout the crystal at random and with a low density. The waves are assumed to be polarized along the cavity generatrices, and the wave propagation occurs in the elastic isotropy plane, which is orthogonal to the cavity axes. The external field is assumed to be axial. Possibility of controlling the propagation of shear waves by the polarizing field is demonstrated for the case of metallized cavity surfaces.     

用静电天平测量驻极体的电场强度和真空介电常数

利用分析开平改制的静电天平,当天平平衡时,静电吸引力就等于砝码重力。再根据力学的虚功原理,力等于能量的负梯度,导出电场强度与砝码质量和极板面积的关系式,可以求出电场强度和真空介电常数。     

Molecular properties and potential energy function model of BH under external electric field

Using the density functional B3P86/cc-PV5Z method, the geometric structure of BH molecule under different external electric fields is optimized, and the bond lengths, dipole moments, vibration frequencies, and other physical properties parameters are obtained. On the basis of setting appropriate parameters, scanning single point energies are obtained by the same method and the potential energy curves under different external fields are also obtained. These results show that the physical property parameters and potential energy curves may change with external electric field, especially in the case of reverse direction electric field. The potential energy function without external electric field is fitted by Morse potential, and the fitting parameters are obtained which are in good agreement with experimental values. In order to obtain the critical dissociation electric parameter, the dipole approximation is adopted to construct a potential model fitting the corresponding potential energy curve of the external electric field. It is found that the fitted critical dissociation electric parameter is consistent with numerical calculation, so that the constructed model is reliable and accurate. These results will provide important theoretical and experimental reference for further studying the molecular spectrum, dynamics, and molecular cooling with Stark effect.     

An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage

A reduced surface electric field in an AlGaN/GaN high electron mobility transistor(HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas(2-DEG) channel as an electric field shaping layer.The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions.Compared with the HEMTs with conventional sourceconnected field plates and double field plates,the HEMT with a Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge.By optimizing both the length of Mg-doped layer,L m,and the doping concentration,a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure,respectively.In a device with V GS = -5 V,L m = 1.5 μm,a peak Mg doping concentration of 8×10 17cm-3 and a drift region length of 10 μm,the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.     

Enhancement and inversion of an alternating-current electric field in a finely dispersed dielectric

It has been found that a sinusoidal electric field is enhanced by a factor of more than 10³ in two plane-parallel layers of different dielectrics placed between plates of a parallel-plate capacitor. The implementation of the enhancement of the electric field requires that the following two conditions should be satisfied: (1) one of the two layers should consist of finely dispersed dielectric particles with ionized donor centers formed on their surface and free electrons in their bulk, and (2) the dielectric permittivity of the powder should have a negative value. It has also been found that, in the powder layer, the enhancement of the electric field occurs simultaneously with its inversion.     

Modeling of a nanoscale rectangular hole in a real metal

We propose and implement a simple and accurate method to analyze a subwavelength rectangular hole in a real metal and obtain the modal characteristics of its fundamental mode. Our results are found to be in excellent agreement with those reported in the literature, obtained by the effective index method (EIM) and finite-element and finite-difference methods. Unlike the EIM, the present method has no ambiguity in its implementation and is able to predict the major field components also, which may be useful in understanding the extraordinary transmission characteristics of such structures.     

One model of electric conduction and electric field distributions in a liquid insulator

The electric properties of the liquid insulator have been studied in this work. We have described the time-dependent model of the conduction processes in the liquid insulator under high voltages. Our model is a generalization of the Frenkel conduction model. (The last deals only with stationary conduction processes). Calculation of the electric field has also been made for two types of problems: (1) the external electric field applied to a liquid, is created by plane electrodes. (2) A spherical electrode of a small size creates it. The electrodes are assumed to be under constant high voltage. There is no electron emission or ion injection from the electrodes. But the field intensity influences on the molecular dissociation rate, and this fact has been taken into account. We have shown that the space charge, which arises under conditions mentioned above gives rise to changes in the electric field distribution. The model on hand is also used for calculating the hydrodynamic phenomena under high non-uniform electric field intensities. It has also been shown that the velocity of the strong EHD flows is proportional to the value of direct current or the squared value of applied voltage.     

An AlGaN/GaN HEMT with reduced surface electric field and improved breakdown voltage

A reduced surface electric field in AlGaN/GaN high electron mobility transistor (HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas (2-DEG) channel as an electric field shaping layer. The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions. Compared with the HEMTs with conventional source-connected field plate and double field plate, the HEMT with Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, L_m, and the doping concentration, a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure, respectively. In a device with V_GS=-5 V, L_m=1.5 μm, a peak Mg doping concentration of 8× 10¹⁷ cm^-3 and a drift region length of 10 μm, the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.     

Dispersion of a charged gas bubble in a liquid dielectric in an electric field

Onsager’s principle of minimum energy dissipation in nonequilibrium processes is applied to calculate the characteristics of a surface-conducting charged bubble breakup in a liquid dielectric in a uniform electrostatic field. The domains of physical parameters are determined in which daughter bubbles are ejected from both apexes and are not ejected from only one apex.     

堆叠栅介质对称双栅单Halo应变Si金属氧化物半导体场效应管二维模型

提出了一种堆叠栅介质对称双栅单Halo应变Si金属氧化物半导体场效应管(metal-oxide semiconductor field effect transistor,MOSFET)新器件结构.采用分区的抛物线电势近似法和通用边界条件求解二维泊松方程,建立了全耗尽条件下的表面势和阈值电压的解析模型.该结构的应变硅沟道有两个掺杂区域,和常规双栅器件(均匀掺杂沟道)比较,沟道表面势呈阶梯电势分布,能进一步提高载流子迁移率;探讨了漏源电压对短沟道效应的影响;分析得到阈值电压随缓冲层Ge组分的提高而降低,随堆叠栅介质高k层介电常数的增大而增大,随源端应变硅沟道掺杂浓度的升高而增大,并解释了其物理机理.分析结果表明:该新结构器件能够更好地减小阈值电压漂移,抑制短沟道效应,为纳米领域MOSFET器件设计提供了指导.     

Effect of longitudinal electric field on capillary instability of a thin axisymmetric layer of liquid dielectric coating a dielectric fiber

The flow of a viscous dielectric liquid surrounded with a gas is investigated in the process of capillary disintegration of a thin axisymmetric liquid layer on an undeformable cylindrical dielectric fiber in a uniform electric field is investigated. An asymptotic analysis of the system of equations and hydrodynamic boundary conditions written with allowance for surface ponderomotive forces is carried out for the case when the average thickness of the layer is much smaller than the radius of the fiber cross section. The problem of the transition of the liquid configuration from the state of a stationary cylindrical layer to the hydrodynamic state in the form of a regular sequence of drops is formulated. In this formulation, a nonlinear parabolic equation that describes the evolution of the local thickness of the layer on the time interval to the instant of drop formation is derived. The effect of the key parameters on the capillary instability is analyzed based on the linearized version of the resultant equation and the linearized electrostatic problem of calculating the field perturbations.     

高$lt;i$gt;k$lt;/i$gt;栅介质小尺寸全耗尽绝缘体上锗p型金属氧化物半导体场效应晶体管漏源电流模型

通过求解沟道的二维泊松方程得到沟道表面势和沟道反型层电荷, 建立了高k栅介质小尺寸绝缘体上锗(GeOI) p型金属氧化物半导体场效应晶体管(PMOSFET)的漏源电流解析模型. 模型包括了速度饱和效应、迁移率调制效应和沟长调制效应, 同时考虑了栅氧化层和埋氧层与沟道界面处的界面陷阱电荷、氧化层固定电荷对漏源电流的影响. 在饱和区和非饱和区, 漏源电流模拟结果与实验数据符合得较好, 证实了模型的正确性和实用性. 利用建立的漏源电流模型模拟分析了器件主要结构和物理参数对跨导、漏导、截止频率和电压增益的影响, 对GeOI PMOSFET的设计具有一定的指导作用. 关键词： 绝缘体上锗p型金属氧化物半导体场效应晶体管 漏源电流模型 跨导 截止频率