Pulse fidelity control in a 20-μJ sub-200-fs monolithic Yb-fiber amplifier

We discuss nonlinearity management versus energy scalability and compressibility in a three-stage monolithic 100-kHz repetition rate Yb-fiber amplifier designed as a driver source for the generation and tunable parametric amplification of a carrier-envelope phase stable white-light supercontinuum.     

Analyzing sub-100-μm samples with transmission terahertz time domain spectroscopy

The authors propose a method for the extraction of material parameter and thickness information from sub-100-μm thin samples using non-differential transmission terahertz time domain spectroscopy. The approach relies on an additional Fourier transform of the frequency dependent material parameters to a quasi space regime. In this quasi space, periodic Fabry-Perot oscillations from the frequency domain, which originate from multiple reflections inside the sample, correspond to discrete peaks. By iterative minimization of these peaks, the highly precise thickness information along with the refractive index and absorption coefficient of the sample can be determined. Experimental verification of the approach is also provided.     

Modeling of InGaAsP–InP 1.55 μm lasers with integrated mode expanders using fiber-matched leaky waveguides

A new concept for InGaAsP–InP 1.55 μm lasers integrated with spot size converters using leaky waveguides is presented. The large fundamental mode size and the high discrimination of the higher order modes make ARROWs (Antiresonant Reflecting Optical Waveguides) and antiguided waveguides useful for fiber coupling functions. Three-dimensional (3-D) beam propagation method (BPM) results show that the devices have transformation losses lower than 0.22 dB. Fiber-coupling efficiencies of 60% are possible with standard cleaved single-mode fibers (SMF). The horizontal and vertical FWHM can be efficiently reduced to 9.70° (horizontal) and 17.80° (vertical). The fabrication of such devices avoids the growth of thick layers of quaternary material with a low Ga and As fraction, and simplifies the fabrication to one planar epitaxial growth step and one non-critical conventional etch. Received: 16 May 2001 / Published online: 30 October 2001     

AlGaInAs multiple-quantum-well 1.2-μm semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier

An AlGaInAs multiple quantum well structure is reported as an effective gain medium of the in-well pumped high-peak-power semiconductor disk laser at 1.2 μm. We use an Yb-doped pulsed fiber amplifier as the pump source to effectively optimize the output characteristics. The maximum average output power of 1.28 W and peak output power of 0.76 kW is obtained at 1225 nm lasing wavelength under 60 kHz pump repetition rate and 28 ns pump pulse width.     

Improving robustness of GGNMOS with P-base layer for electrostatic discharge protection in 0.5-μm BCD process

Gate-grounded N-channel MOSFET(GGNMOS) has been extensively used for on-chip electrostatic discharge(ESD)protection. However, the ESD performance of the conventional GGNMOS is significantly degraded by the current crowding effect. In this paper, an enhanced GGNMOS with P-base layer(PB-NMOS) are proposed to improve the ESD robustness in BCD process without the increase in layout area or additional layer. TCAD simulations are carried out to explain the underlying mechanisms of that utilizing the P-base layer can effectively restrain the current crowing effect in proposed devices. All devices are fabricated in a 0.5-μm BCD process and measured using the transmission line pulsing(TLP)tester. Compared with the conventional GGNMOS, the proposed PB-NMOS devices offer a higher failure current than its conventional counterpart, which can be increased by 15.38%. Furthermore, the PB-NMOS type 3 possesses a considerably lower trigger voltage than the conventional GGNMOS to protect core circuit effectively.     

Collisional excitation X-ray laser experiments in plasmas produced by 0.53-μm and 0.35-μm laser light

Recent Ne- and Ni-like X-ray laser experiments carried out at the Centre d'Etudes de Limeil-Valenton (CEL-V) are reviewed. A variety of experiments in Ne-like X-ray lasers were performed; here we discuss measurements of soft X-ray amplification in Ge (Z=32) and Sr (Z=38) plasmas. In Ge plasmas produced by 0.53-m laser light at an irradiance of 6.0×10¹³ W/cm², gains between 2.2–2.5 cm^–1 on the 232.2 and 236.2 Å J=2–1 lines and a gain of 1.0 cm^–1 on the 196.1 Å J=0–1 line were measured. In addition, gains of 4.4 cm^–1 and 4.0 cm^–1 have been demonstrated on the J=2–1 transitions at 164.1 and 166.5 Å in Nelike Sr at laser intensities of 1.3×10¹⁴ W/cm². The effects of pumping the Ne-like Se X-ray laser with 0.35-m laser light have also been investigated; the Se lasing spectra is similar to that obtained with 0.53-m light. Experiments have also been carried out to optimize the gain of the 50.3 Å Ni-like Yb (Z=70) J=0–1 line. For Yb, no significant increase in gain over that previously reported was seen, but the time history of the Ni-like Yb X-ray laser was measured for the first time. Finally, attempts to extrapolate the Ni-like results to shorter wavelength were made using Ta (Z=73), W (Z=74), and Re (Z=75). No definitive observation of the Ni-like J=0–1 lasing lines was made in these experiments.     

Suppression of slow gain recovery in ultralong quantum-dash semiconductor optical amplifier emitting at 1.55 μm

Gain dynamics in two quantum-dash semiconductor optical amplifiers of different lengths emitting in the 1.55 μm region are investigated experimentally and compared. It is shown that slow gain recovery due to total carrier relaxation is totally suppressed in the ultralong amplifier. Consequently, the 10%-90% gain recovery time is drastically reduced from about 40 ps (short sample) to 10 ps (long one).     

Systematic study on the confinement structure design of 1.5-μm InGaAlAs/InP multiple-quantum-well lasers

An in-dept analysis on the separate confinement heterostructure (SCH) design parameters of 1.5-μm InGaAlAs/InP multiple quantum-well (MQW) lasers is reported. Theoretical calculations show a drastic enhancement on threshold current and slope efficiency from step-index SCH (STEP-SCH) to graded-index SCH (GRIN-SCH) design, but the effect ceases beyond a critical number of grading steps. This finding implies ease of the growth process and reduction in cost. The overall GRIN-SCH’s thickness is found to exert great influence over the achievable laser’s threshold current and slope efficiency. An average of 27 mA threshold current reduction and more than 32% of slope efficiency increment were achieved by optimizing the GRIN-SCH thickness. Increasing the grading energy range of the GRIN-SCH decreases the slope efficiency, but is found to effectively reduce carrier leakage at elevated temperature leading to a less temperature-sensitive threshold current MQW ridge lasers were fabricated and characterized out of two laser materials, one with a reference STEP-SCH and another with a proposed optimized GRIN-SCH profile. The laser with optimised SCH design has shown a 36% reduction in room temperature threshold current as compared to that with the STEP-SCH design, which is in good agreement to the theoretical simulation. In addition, a record high characteristic temperature (T ₀) of 105 K was obtained on the GRIN-SCH laser structure, which is more than three fold increment as compared to the STEP-SCH design.     

Influences of quantum noises on direct-modulated properties of 1.3-μm InGaAsP/InP laser diodes

Due to the zero dispersion point at 1.3μm in optical fibres, 1.3-μm InGaAsP/InP laser diodes have become main light sources in fibre communication systems recently. Influences of quantum noises on direct-modulated properties of single-mode 1.3-μm InGaAsP/InP laser diodes are investigated in this article. Considering the carrier and photon noises and the cross-correlation between the two noises, the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the direct-modulated single-mode laser system are calculated using the linear approximation method. We find that the stochastic resonance (SR) always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coefficient between the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity. Hence, it is promising to use the SR mechanism to enhance the SNR of direct-modulated InGaAsP/InP laser diodes and improve the quality of optical fibre communication systems.     

Generation of optical waveforms in 1.3-μm SOA-based fiber lasers

Passive optical waveform generation is obtained in fiber lasers using a 1.3-μm semiconductor optical amplifier (SOA) as the gain medium. Various waveforms, including square wave, staircase wave, triangular wave, pulse, and dark pulse are generated in SOA-based fiber lasers by adjusting intracavity polarization controllers. The passive waveform generation might be attributed to the SOA gain dynamics and the enhanced nonlinear interaction at the 1.3-μm zero dispersion wavelength of traditional single-mode fiber (SMF), as well as the interference effect between the two sub-cavities of fiber laser. With figure-8 cavity configuration, 1250th-order harmonic pulses have been successfully demonstrated. We have also obtained a free-running SOA-based fiber laser with 3-dB spectral width of 16 nm, and the center wavelength can be tuned over 45 nm range.     

一种InP双异质结双极晶体管小信号物理模型及其提取方法

研究了InP双异质结双极晶体管（DHBT）的能带结构对集电极电容的影响,解决了传统方法不能准确提取InP DHBT集电极电容的问题.考虑了基极-发射极和集电极-发射极引线间的交叠电容,并从物理上区分了InP DHBT的本征电阻、外部电阻与寄生电阻,建立了一个基于物理的InP基DHBT小信号模型.同时提出了一套直接提取模型参数的方法,该方法无需引入数学优化,具有清晰的物理意义.提取的结果在很宽的偏置范围内准确地拟合了器件特性,验证了模型的准确性与提取方法的有效性. 关键词： InP双异质结双极晶体管 集电极电容 小信号模型 参数提取     

Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors(DHBTs) based on hydrodynamic simulation is developed.The model is based on the hydrodynamic equation,which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted collector.In addition,the model accounts for several physical effects such as bandgap narrowing,variable effective mass,and doping-dependent mobility at high fields.Good agreement between the measured and simulated values of cutoff frequency,f t,and maximum oscillation frequency,f max,are achieved for lateral and vertical device scalings.It is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs.     

A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.