快速电沉积氧化锌纳米柱及其非辐射复合

为在新型太阳能电池等先进光电器件中成功应用ZnO纳米柱阵列,需要以高沉积速率生长ZnO纳米柱,并能够对纳米柱的形貌与光电物理性质进行操控。使用电沉积方法制备ZnO纳米柱阵列,在主电解液中加入了六次甲基四胺,对所制备的ZnO纳米柱阵列的形貌与光电物理性质进行了测试分析。六次甲基四胺能够大幅提升ZnO纳米柱的生长速率,相比未使用六次甲基四胺的电解液配方,ZnO纳米柱的生长速率提高了356%。同时,纳米柱的直径与阵列密度得到有效降低,纳米柱间距增大至58 nm。六次甲基四胺的引入使ZnO纳米柱的光学带隙约红移了0.12 eV。在六次甲基四胺的作用下,ZnO纳米柱的斯托克斯位移减小0.15 eV,非辐射复合受到抑制。通过使用六次甲基四胺,实现了ZnO纳米柱的快速电沉积生长,同时实现了对纳米柱的光学带隙、近带边发射、斯托克斯位移、非辐射复合等光电物理性质的操控。     

水浴法制备ZnO纳米棒及其场发射性能

用硝酸锌(Zn(NO3)2·6H2O)与六亚甲基四胺(C6H12N4)以等浓度配制成反应溶液,通过水浴法制备出了形貌可控的棒状ZnO纳米结构,讨论了不同反应浓度及衬底对ZnO表面形貌的影响.样品的XRD和扫描电子显微镜分析结果表明,所得产物均为六方纤锌矿结构,在有晶种层的衬底上制备出的ZnO纳米棒沿(001)方向并垂直于衬底表面生长.随着反应浓度的增加,ZnO纳米棒的直径增大,长径比减小.样品的场发射性能测试表明,反应溶液浓度为0.005 mol/L,以铜膜为晶种层的硅衬底上制备出的场发射阴极具有较好的场发射性能.     

聚乙烯亚胺对氧化锌纳米阵列形貌的影响

采用化学沉淀法,以硝酸锌和六次亚甲基四胺的水溶液为生长溶液,在涂覆氧化锌晶种层的玻璃衬底上制备了定向生长的氧化锌纳米棒阵列,并研究了添加剂聚乙烯亚胺的浓度对氧化锌纳米棒形貌和结构的影响。X射线衍射和场发射扫描电镜的结果表明,合成的氧化锌纳米棒阵列较为均匀致密,具有六方纤锌矿结构,且有沿(002)晶面择优生长的特性;随着聚乙烯亚胺浓度的增加,氧化锌纳米棒的直径减小,直径分布趋于均匀,且氧化锌纳米棒的形貌也从锥状转变为柱状结构;另外,聚乙烯亚胺的加入对氧化锌的生长速度具有抑制作用,当聚乙烯亚胺的浓度增加至0.012 mol·L-1时,无氧化锌阵列生长。对氧化锌纳米棒阵列进行了拉曼光谱表征,结果表明,随着溶液中聚乙烯亚胺浓度的增加,氧化锌纳米棒的氧空位缺陷减少。最后,对聚乙烯亚胺浓度对氧化锌纳米阵列影响的机理进行了探讨。     

一步水热法在Al掺杂ZnO纳米盘上可控自组装合成ZnO纳米棒阵列

通过简单的水热合成路线,在没有模板、表面活性剂的作用和未处理的基底上合成出铝掺杂ZnO 纳米盘,并以纳米盘为基底自组装合成了ZnO纳米棒阵列.扫描电镜(SEM)观察到铝掺杂ZnO纳米盘的厚度为 200 nm,纳米盘的尺寸约为2 μm;纳米棒的直径约为150 nm,长约1.5 μm.通过不同生长阶段的形貌变化探讨了ZnO纳米结构的形成机理,表明自组装过程存在两个成核阶段.另外, 研究了铝离子掺杂对样品光致发光性质的影响.     

高度均一ZnO纳米梭的水热法制备及其性能

以六亚甲基四胺和硝酸锌为原料,采用水热法在90℃条件下反应24h,于Si衬底上制备出一维ZnO纳米梭材料.采用场发射扫描电镜、X射线衍射仪和高分辨透射电镜等方法对样品形貌和晶体结构进行了表征.结果表明,所得ZnO纳米梭形貌一致、尺寸均匀,为六方纤锌矿型结构,具有良好的结晶性能.对ZnO纳米梭的光致发光性能的研究表明,该...     

CdS/ZnO纳米复合结构的制备、表征及其光催化活性的改善

利用简单的水热法在ZnO纳米棒表面合成CdS纳米粒子.用扫描电镜(SEM)和X射线衍射(XRD)对CdS/ZnO异质结构进行表征.实验结果表明,在生长CdS的过程中ZnO被逐渐地腐蚀.选择CdS/ZnO纳米复合材料作为光催化剂在紫外光和绿光照射的条件下降解甲基橙(MO).CdS/ZnO纳米复合材料纳米棒作为光催化剂降解...     

ZnS修饰对ZnO纳米棒：P3HT复合薄膜I-V性质的影响

本文通过化学浴沉积法获得了直径约为50 nm, 长度约为250 nm的ZnO纳米棒阵列, 引入纳米ZnS对ZnO纳米棒进行表面修饰, 分别制备得到了具有ITO (indium tin oxides)/ZnO/Poly-(3-hexylthiophene) (P3HT)/Au和ITO/ZnO@ZnS/P3HT/Au结构的多层器件. 通过I-V曲线对比讨论了两种结构器件的开启电压, 串联电阻, 反向漏电流及整流比等参数, 认为包含ZnS修饰层器件的开启电压、串联电阻、反向漏电流明显降低, 整流比显著增强, 展现出更优异的电子传输性能. 光致发光光谱分析结果证实由于ZnS使ZnO纳米 棒的表面缺陷产生的非辐射复合被明显抑制, 弱化了电场激发下的载流子陷获, 改善了器件的导电特性. 关键词： ZnO纳米棒阵列 表面修饰 电流-电压特性     

六角锥状ZnO纳米结构的生长机理、结构及光学性能(英文)

利用醋酸锌[Zn(CH3COO)2·2H2O]和六次甲基四胺(C6H12N4)以一定比例配置成反应溶液,通过水热合成法制备了六角锥状ZnO纳米结构。同时,使用了扫描电子显微镜(SEM)、X射线衍射和选区电子衍射(SAED),对样品的形貌与结构进行了分析。结果表明,样品形貌成六角锥状结构,并且在[002]方向择优生长。通过对样品的光学性能测试,由PL光谱分析可知,样品在379nm处有一个较强的紫外发光峰,并且在可见光区域产生了一些较弱的可见光发射峰,表明制备的六角锥状ZnO纳米结构的晶体质量不是很好。除此之外,对六角锥状ZnO的生长机理也进行了讨论。     

ZnO纳米棒的制备及紫外探测性能

通过水热法在ITO衬底上成功合成了ZnO纳米棒,并以ITO为电极制备了ZnO纳米棒紫外探测器件。在室温下测试了所制备器件对紫外光的响应性能。测试结果表明,ZnO纳米棒对紫外光有很好的光响应,在0V附近,ZnO纳米棒紫外探测器的灵敏度能达到1500。此外,通过循环测试可以观测到ZnO纳米棒紫外探测器具有良好的重复性和稳定性。     

Mn掺杂ZnO纳米棒阵列的制备及其磁学性质研究

在95 ℃条件下通过水热方法制备出垂直于ITO基底高密度均匀生长的Mn掺杂ZnO（ZnO：Mn）纳米棒阵列. 纳米棒的直径约为100纳米,长约1微米,且沿［001］方向生长. XRD和XPS结果证实了Mn以替位方式掺杂到纳米棒中,并且掺杂浓度与反应物中的Mn离子浓度似呈正比关系. 所制备的ZnO：Mn纳米棒在室温均有铁磁性,其饱和磁化强度随反应物中Mn离子浓度的提高,饱和磁化强度呈现出先增大,5at.%时达到最大值,0.11 emu/g,然后减小. 铁磁性来源于取代Zn离子的Mn离子之间的铁磁交换相互作用.     

Study of Zinc Oxide nano/micro rods grown on ITO and glass substrates

Highly oriented multilinked ZnO nano and micro rods were deposited using aqueous solution growth technique on ITO and glass substrates. Their study provides a basic understanding of effect of the base material on the growth of nanorods. An equimolar aqueous solution of Zinc nitrate and hexamine (HMT) was used for the preparation of ZnO nanorods arrays. ZnO was deposited on ITO and glass substrates after establishing the optimal pH and concentration, which yield the best substrate coverage for precursor solution. To achieve uniform growth and high density of ZnO nanorods, the prepared solution was heated at certain constant temperature. The experimental results have been obtained by using Scanning Electron Microscope (SEM), X-ray diffractometer (XRD) and Fluorescence Spectroscope which shows highly oriented nanorods perpendicular to the surface of substrates and a comparative study of ITO and glass grown nanorod arrays shows that the structural chemistry of the substrate clearly affects the growth nanostructures. The high variation in optical properties can be attributed by the heating temperatures and limited presence of reactants available for the controlled growth on substrates. It is also observed confined and decreased particle size with enhanced nucleation on ITO substrate as compared to glass. Due to the physical limitations in the growth, this kinetically controlled nucleation would be responsible for producing the highly uniform, dense and perpendicularly oriented nanorods.     

Studies on structural and magnetic properties of Co-doped pyramidal ZnO nanorods synthesized by solution growth technique

Large-area arrays of highly oriented Co-doped ZnO nanorods with pyramidal hexagonal structure are grown on silica substrates by wet chemical decomposition of zinc–amino complex in an aqueous medium. In case of undoped ZnO with an equi-molar ratio of Zn²⁺/hexamethylenetetramine (HMT), highly crystalline nanorods were obtained, whereas for Co-doped ZnO, good quality nanorods were formed at a higher Zn²⁺/HMT molar ratio of 4:1. Scanning electron microscope (SEM) studies show the growth of hexagonal-shaped nanorods in a direction nearly perpendicular to the substrate surface with a tip size of ～50 nm and aspect ratio around 10. The XRD studies show the formation of hexagonal phase pure ZnO with c-axis preferred orientation. The doping of Co ions in ZnO nanorods was confirmed by observation of absorption bands at 658, 617 and 566 nm in the UV–vis spectra of the samples. The optical studies also suggest Co ions to be present both in +2 and +3 oxidation states. From the photoluminescence studies, a defect-related emission is observed in an undoped sample of ZnO at 567 nm. This emission is significantly quenched in Co-doped ZnO samples. Further, the Co-doped nanorods have been found to show ferromagnetic behavior at room temperature from vibrating sample magnetometer (VSM) studies.     

Synthesis and optical properties of ZnO nanorods on indium tin oxide substrate

ZnO nanorods with uniform diameter and length have been synthesized on an indium-tin oxide (ITO) substrate by using a simple thermal evaporation method which is suitable to larger scale production and without any catalyst or additives. The samples were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-vis (UV-vis) absorption spectrum, photoluminescence (PL) spectrum and Raman spectrum. The single-phase ZnO nanorods grow well-oriented along the c-axis of its wurtzite structure on ITO substrate. The ZnO nanorods shows sharp and strong UV emission located at 380 nm without notable visible light emission in the PL spectrum, which suggests the good crystallinity of the nanorods, which was also testified by their Raman spectrum. The photodegradation of methylene orange (MO) in aqueous solution reveals that the well-arranged c-axis growth of ZnO nanorods possess evidently improved photocatalytic performance and these properties enable the ZnO nanorods potential application in UV laser.     

ZnO纳米棒的低温溶液法制备、光电特性研究及其在有机/无机复合电致发光中的应用

利用水热法制备了垂直于衬底的定向生长的ZnO纳米棒,利用扫描电子显微镜及光致发光的方法对其形貌及光学特性进行了表征,利用场发射性能测试装置对ZnO纳米棒的场发射性能进行了测试.结果表明:利用水热法在较低的温度(95 ℃) 下生长了具有较好形貌和结构的ZnO纳米棒,并表现出了较好的场发射特性,当电流密度为1 μA/cm²时,开启电场是2.8 V/μm,当电场为6.4 V/μm时,电流密度可以达到0.67 mA/cm²,场增强因子为3360.稳定性测试表明,在5 h内,4.5 V/μm的电场下,其波动不超过25%.将制备的ZnO纳米棒应用到有机/无机电致发光中,其中ZnO纳米棒为电子传输层,m-MTDATA(4,4',4″-tris{N,(3-methylphenyl)-N-phenylamino}-triphenylamine) 为空穴传输层,得到了ZnO的342 nm的紫外电致发光,此发光较ZnO纳米棒光致发光的紫外发射有约40 nm的蓝移. 关键词： ZnO纳米棒 场发射 水热法 有机/无机复合电致发光     

Growth mechanism of ZnO nanorod/Fe3O4 nanoparticle composites and their photocatalytic properties

ZnO nanorods/Fe₃O₄ nanocomposites as the recyclable photocatalyst were synthesized by a co-precipitation method, with microwave assistant by dropping alkaline solution with Fe₃O₄ nanoparticles into the aqueous of zinc salt. These Fe₃O₄ nanoparticles were the nucleated centers for the ZnO nanorods growth so that these nanorods ended with aggregated Fe₃O₄ nanoparticles. The growth processes and mechanism are explained as those insoluble zinc hydroxides prefer to nucleate on the surface of Fe₃O₄ nanoparticles (heterogeneous nucleation) rather than nucleated as isolated ZnO nanostructures (homogeneous nucleation). These nanocomposites have strong photocatalytic ability to reduce RhB and moderate magnetization, which make them being good recyclable photocatalysts.     

Thermo-electrochemical selective growth of ZnO nanorods on any noble metal electrodes

Selective growth of ZnO nanorods has been successfully performed on the patterned Au/Ti metal electrode regions on a glass substrate by using a seeded thermo-electrochemical method in an acidic growth solution. The selective growth mechanism of the thermo-electrochemical method was proposed by using a series of chemical reactions for the first time. The thermo-electrochemical selective ZnO growth was performed on the cathode electrode at a temperature below 90 °C. A ZnO seed layer was precoated and selectively etched away from the non-metal regions in order to create the patterned selective nucleation sites on which the precursors are transferred and crystallized into ZnO nanorods. Both the dimensions and the placements of the ZnO nanorods have been simultaneously controlled. Energy dispersive X-ray spectrometry showed that the selectively grown ZnO nanorods consist of only Zn and O, indicating that the selectively grown ZnO nanorods are pure and contamination free. XRD and electron diffraction patterns revealed that the obtained ZnO nanorods have a wurtzite single-crystal structure.     

Electrical properties and carrier transport mechanisms of nonvolatile memory devices based on randomly oriented ZnO nanowire networks

We report reproducible bipolar resistive memory devices based on Au/ZnO nanowire networks (ZnO NWNs)/ITO, which show a high R_on/R_off ratio (～10⁴) and narrow dispersion of set and reset threshold voltages. The dominant conduction mechanisms of low resistance state and high resistance state were verified by Ohmic behavior and space charge limited current, respectively. The switching mechanism is confirmed in terms of the formation and rupture of conductive filaments, with oxygen vacancies localized on the ZnO NWNs surface involved in. The Au/ZnO NWNs/ITO devices presented in our work show potential applications in the next generation nonvolatile memory field. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrodeposition of ZnO nanorods for device application

We report the electrochemical growth of zinc oxide nanorods in a zinc nitrate/hexamethylenetetramine solution at 70 °C. High-density vertical nanorods were grown on Au films on silicon substrates with a texture coefficient better than 99.9%. By varying the reactant concentration the diameter can be varied between 100 and 250 nm, with corresponding lengths of 1 to 4 μm. Furthermore, this approach was used for the selective growth on Ti/Au strip conductors ordered in an interdigitated structure on an insulating substrate. We achieved the growth of ZnO nanorods between neighbouring strip conductors bridging the gap between them. In this configuration the nanorods are already contacted and electrical measurements can be directly performed. First I–V measurements show a good conductivity of the as-grown nanorods and the resistance could be estimated to be 0.1 Ω cm. Under UV illumination the ZnO nanorods demonstrate a photoconductivity, but only after annealing the sample at 300 °C in N₂. PACS 61.05.cp; 73.63.-b; 78.55.Et; 81.15.Pq; 82.45.Yz     

Preparation and characterization of ZnO nanorods from NaOH solutions with assisted electrical field

ZnO naorods on ZnO-coated seed substrates were fabricated by solution chemical method from Zn(NO₃)₂/NaOH under assisted electrical field. The working mechanism of electrical field was analyzed and the factors affecting the rod growth such as potential, precursor concentration and growth temperature were elucidated. The structural and optical properties are characterized by SEM, TEM, XRD, HRTEM and UV-vis. The results indicated that the nanorods have wurtzite structure without electrical field and are primarily of zincite structure under electrical field; when the electrical field is 1.1-1.3 V, not only the elevation of ion diffusion and adsorption lower the crystallite/solution interfacial energy and then the crystal nucleation barrier by increasing charge intensity, but also the production of H⁺ through oxidation of OH⁻ increases properly the degree of solution supersaturation near the substrate, and thus lowers the activation energy. Both the two processes do favor to rod growth. With increasing precursor concentration in this system, the average diameter and length of ZnO nanorods increase, leading to decreasing of optical transmittance. The maximum rod growth rate at given concentration of Zn²⁺ occurs at a specific temperature.     

The effect of Al doping on the morphology and optical property of ZnO nanostructures prepared by hydrothermal process

The undoped and Al-doped ZnO nanostructures were fabricated on the ITO substrates pre-coated with ZnO seed layers using the hydrothermal method. The undoped well-aligned ZnO nanorods were synthesized. When introducing the Al dopant, ZnO shows various morphologies. The morphology of ZnO changes from aligned nanorods, tilted nanorods, nanotubes/nanorods to the nanosheets when the Al doping concentrations increase. The ZnO nanostructures were characterized by X-ray diffraction, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, photoluminescence and Raman technology. The Al doping concentrations play an important role on the morphology and optical properties of ZnO nanostructures. The possible growth mechanism of the ZnO nanostructures was discussed.