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1.
The anisotropic strain of a nonpolar (1120) a-plane GaN epilayer on an r-plane (1102) sapphire substrate, grown by low-pressure metal-organic vapour deposition is investigated by Raman spectroscopy. The room-temperature Raman scattering spectra of nonpolar a-plane GaN are measured in surface and edge backscattering geometries. The lattice is contracted in both the c- and the m-axis directions, and the stress in the m-axis direction is larger than that in the c-axis direction. On the surface of this sample, a number of cracks appear only along the m-axis, which is confirmed by the scanning electron micrograph. Atomic force microscopy images reveal a significant decrease in the root-mean-square roughness and the density of submicron pits after the stress relief. 相似文献
2.
The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal-organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomic force microscopy results show that triangular pits are formed at a relatively high V/III ratio, while a relatively low V/III ratio can enhance the lateral growth rate along the c-axis direction. The higher V/III ratio leads to a high density of pits in comparison with the lower V/III ratio. The surface morphology is improved greatly by using a low V/III ratio of 500 and the roughness mean square of the surface is only 3.9 nm. The high resolution X-ray diffraction characterized crystal structural results show that the rocking curve full width at half maximum along the m axis decreases from 0.757° to 0.720°, while along the c axis increases from 0.220° to 0.251° with the V/III increasing from 500 μmol/min to 2000 μmol/min, which indicates that a relatively low V/III ratio is conducible to the c-axis growth of a-plane GaN. 相似文献
3.
In this paper,we use the a-plane InGaN interlayer to improve the property of a-plane GaN.Based on the a-InGaN interlayer,a template exhibits that a regular,porous structure,which acts as a compliant effect,can be obtained to release the strain caused by the lattice and thermal mismatch between a-GaN and r-sapphire.We find that the thickness of InGaN has a great influence on the growth of a-GaN.The surface morphology and crystalline quality both are first improved and then deteriorated with increasing the thickness of the InGaN interlayer.When the InGaN thickness exceeds a critical point,the a-GaN epilayer peels off in the process of cooling down to room temperature.This is an attractive way of lifting off a-GaN films from the sapphire substrate. 相似文献
4.
Structural and optical investigation of nonpolar α-plane GaN grown by metalben organic chemical vapour deposition on r-plane sapphire by neutron irradiation
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Nonpolar (1120) α-plane GaN films are grown by metal-organic chemical vapour deposition (MOCVD) on r-plane (1102) sapphire. The samples are irradiated with neutrons under a dose of 1 × 1015 cm-2. The surface morphology, the crystal defects and the optical properties of the samples before and after irradiation are analysed using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD) and photoluminescence (PL). The AFM result shows deteriorated sample surface after the irradiation. Careful fitting of the XRD rocking curve is carried out to obtain the Lorentzian weight fraction. Broadening due to Lorentzian type is more obvious in the as-grown sample compared with that of the irradiated sample, indicating that more point defects appear in the irradiated sample. The variations of line width and intensity of the PL band edge emission peak are consistent with the XRD results. The activation energy decreases from 82.5 meV to 29.9 meV after irradiation by neutron. 相似文献
5.
Low-leakage-current AIGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition
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High-performance low-leakage-current A1GaN/GaN high electron mobility transistors (HEMTs) on silicon (111) sub- strates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated. 相似文献
6.
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
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We present the growth of GaN epilayer on Si (111)
substrate with a single AlGaN interlayer sandwiched between the GaN
epilayer and AlN buffer layer by using the metalorganic chemical
vapour deposition. The influence of the AlN buffer layer thickness
on structural properties of the GaN epilayer has been investigated
by scanning electron microscopy, atomic force microscopy, optical
microscopy and high-resolution x-ray diffraction. It is found that
an AlN buffer layer with the appropriate thickness plays an important
role in increasing compressive strain and improving crystal quality
during the growth of AlGaN interlayer, which can introduce a more
compressive strain into the subsequent grown GaN layer, and
reduce the crack density and threading dislocation density in GaN
film. 相似文献
7.
Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition
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High-performance low-leakage-current AlGaN/GaN high electron mobility transistors(HEMTs) on silicon(111) substrates grown by metal organic chemical vapor deposition(MOCVD) with a novel partially Magnesium(Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated. 相似文献
8.
The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates
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AlN/GaN superlattice buffer is inserted between GaN epitaxial layer
and Si substrate before epitaxial growth of GaN layer. High-quality
and crack-free GaN epitaxial layers can be obtained by inserting
AlN/GaN superlattice buffer layer. The influence of AlN/GaN
superlattice buffer layer on the properties of GaN films are
investigated in this paper. One of the important roles of the
superlattice is to release tensile strain between Si substrate and
epilayer. Raman spectra show a substantial decrease of in-plane
tensile strain in GaN layers by using AlN/GaN superlattice buffer
layer. Moreover, TEM cross-sectional images show that the densities
of both screw and edge dislocations are significantly reduced. The
GaN films grown on Si with the superlattice buffer also have better
surface morphology and optical properties. 相似文献
9.
Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer
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An AlGaN/GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of (102) and (002) X-ray diffraction rocking curves. With an increase in the Si-doped concentration in the GaN wells, the full width at half maximum of the (102) rocking curves decreases, while that of the (002) rocking curves increases. A significant increase of the full width at the half maximum of the (002) rocking curves when the doping concentration reaches 2.5 × 1019 cm-3 indicates the substantial increase of the inclined threading dislocation. High level doping in the AlGaN/GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it. 相似文献
10.
在蓝宝石衬底上生长了以AlN/GaN超晶格准AlGaN合金作为势垒的HEMT结构材料,并与传统AlGaN合金势垒样品进行了对比.在高Al组分(≥40%)情况下,超晶格势垒样品的表面形貌明显改进,电学性能特别是2DEG面电子浓度也有所改进.对超晶格势垒生长参数进行了初步优化,使得HEMT结构薄层电阻进一步降低,最后获得了251 Ω/□的薄层电阻.
关键词:
AlGaN/GaN 结构
AlN/GaN超晶格
二维电子气
高电子迁移率晶体管 相似文献
11.
Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition
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We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA. 相似文献
12.
Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures
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It was reported by Shen et al that the
two-dimensional electron gas (2DEG) in an AlGaN/AlN/GaN structure showed high
density and improved mobility compared with an AlGaN/GaN structure, but the
potential of the AlGaN/AlN/GaN structure needs further exploration. By the
self-consistent solving of one-dimensional Schr\"{o}dinger--Poisson
equations, theoretical investigation is carried out about the effects of
donor density (0--1\times 1019cm-3 and temperature
(50--500K) on the electron systems in the AlGaN/AlN/GaN and AlGaN/GaN
structures. It is found that in the former structure, since the effective
\Delta Ec is larger, the efficiency with which the 2DEG absorbs the
electrons originating
from donor ionization is higher, the resistance to parallel conduction is
stronger, and the deterioration of 2DEG mobility is slower as the donor
density rises. When temperature rises, the three-dimensional properties of
the whole electron system become prominent for both of the structures, but the
stability of 2DEG is higher in the former structure, which is also ascribed
to the larger effective \Delta Ec. The Capacitance--Voltage
(C-V) carrier density
profiles at different temperatures are measured for two Schottky diodes on
the considered heterostructure samples separately, showing obviously
different 2DEG densities. And the temperature-dependent tendency of the
experimental curves agrees well with our calculations. 相似文献
13.
Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors
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SiN_x is commonly used as a passivation material for
AlGaN/GaN high electron mobility transistors (HEMTs). In this paper,
the effects of SiN_x passivation film on both two-dimensional
electron gas characteristics and current collapse of AlGaN/GaN HEMTs
are investigated. The SiN_x films are deposited by high- and
low-frequency plasma-enhanced chemical vapour deposition, and they
display different strains on the AlGaN/GaN heterostructure, which
can explain the experiment results. 相似文献
14.
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors
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Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both fabricated with same size. It was found there is a significant difference between Schottky drain AlGaN/AlN/GaN HFETs and the control group both in drain series resistance and in two-dimensional electron gas (2DEG) electron mobility in the gate-drain channel. We attribute this to the different influence of Ohmic drain contacts and Schottky drain contacts on the strained AlGaN barrier layer. For conventional AlGaN/AlN/GaN HFETs, annealing drain Ohmic contacts gives rise to a strain variation in the AlGaN barrier layer between the gate contacts and the drain contacts, and results in strong polarization Coulomb field scattering in this region. In Schottky drain AlGaN/AlN/GaN HFETs, the strain in the AlGaN barrier layer is distributed more regularly. 相似文献
15.
利用金属有机物化学气相沉积系统在蓝宝石衬底上通过有源层的变温生长,得到In组分渐变的量子阱结构,从而获得具有三角形能带结构的InGaN/GaN多量子阱发光二极管(LED)(简称三角形量子阱结构LED).变温光致发光谱结果表明,相对于传统具有方形能带结构的量子阱LED(简称方形量子阱结构LED),三角形量子阱结构有效提高了量子阱中电子和空穴波函数的空间交叠,从而增加了LED的内量子效率;电致发光谱结果表明,三角形量子阱结构LED器件与传统结构LED器件相比,明显改善了发光峰值波长随着电流的蓝移现象.通过以上 相似文献
16.
Effects of SiNx on two-dimensional electron gas and current collapse of A1GaN/GaN high electron mobility transistors
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SiNx is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiNx films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results. 相似文献
17.
The effects of V/Ⅲgrowth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated.The surface morphology,crystalline quality,strain states,and density of basal stacking faults were found to depend heavily upon the V/Ⅲratio.With decreasing V/Ⅲratio,the surface morphology and crystal quality first improved and then deteriorated,and the density of the basal-plane stacking faults also first decreased and then increased.The optimal V/Ⅲratio growth condition for the best surface morphology and crystalline quality and the smallest basalplane stacking fault density of a-GaN films are found.We also found that the formation of basal-plane stacking faults is an effective way to release strain. 相似文献
18.
In this paper, a high performance AlGaN/GaN High Electron Mobility Transistor (HEMT) on SiC substrates is presented to improve the electrical operation with the amended depletion region using a multiple recessed gate (MRG–HEMT). The basic idea is to change the gate depletion region and a better distribution of the electric field in the channel and improve the device breakdown voltage. The proposed gate consists of lower and upper gate to control the channel thickness. Also, the charge of the depletion region will change due to the optimized gate. In addition, a metal between the gate and drain including the horizontal and vertical parts is used to better control the thickness of the channel. The breakdown voltage, maximum output power density, cut-off frequency, maximum oscillation frequency, minimum noise figure, maximum available gain (MAG), and maximum stable gain (MSG) are some parameters for designers which are considered and are improved in this paper. 相似文献
19.
The effects of the In-mole fraction (x) of an InxGa1−xN back barrier layer and the thicknesses of different layers in pseudomorphic AlyGa1−yN/AlN/GaN/InxGa1−xN/GaN heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear Schrödinger-Poisson equations. Strain relaxation limits were also calculated for the investigated AlyGa1−yN barrier layer and InxGa1−xN back barriers. From an experimental point of view, two different optimized structures are suggested, and the possible effects on carrier density and mobility are discussed. 相似文献
20.
研究了在GaN缓冲层中插入40 nm厚高温AlN层的GaN外延层和AlGaN/GaN异质结材料, AlN插入层可以增加GaN层的面内压应力并提高AlGaN/GaN高电子迁移率晶体管(HEMTs)的电学特性. 在精确测量布拉格衍射角的基础上定量计算了压应力的大小. 增加的压应力一方面通过增强GaN层的压电极化电场, 提高了AlGaN/GaN异质结二维电子气(2DEG)面密度, 另一方面使AlGaN势垒层对2DEG面密度产生的两方面影响相互抵消. 同时, 这种AlN插入层的采用降低了GaN与AlGaN层之间的
关键词:
高温AlN插入层
AlGaN/GaN异质结
二维电子气
应力 相似文献