组合法优化Ti掺杂Zn-Al合金薄膜的耐腐蚀性能

应用组合技术, 通过离子束溅射法制备了Zn-Al-Ti合金薄膜材料芯片(其中wAl:wZn=55%:45%(w, 质量分数)), 表征了热处理后薄膜的耐腐蚀性能, 研究了Ti掺杂量对薄膜耐腐蚀性能的影响. 在Ar+5%(φ, 体积分数)H2混合气氛中, 经200 ℃扩散1 h, 再经370 ℃热处理2 h后可以得到高质量的合金薄膜. 通过X射线衍射仪(XRD)和扫描电子显微镜(SEM)分别对热处理后的典型样品进行相结构和形貌表征. 使用电化学方法测试样品的耐腐蚀性能. 结果表明, Ti适量掺杂样品的腐蚀速率明显下降, 其中Ti掺杂量为6.0%(w)的Zn-Al-Ti合金薄膜(94.0%(w) Zn-Al, 其中wAl:wZn=55%:45%)具有最优异的耐腐蚀性能, 其原因在于, Ti适量掺入后晶粒明显细化, 表面更为致密, 且钝化作用增强.

Combinatorial Optimization for the Anti-Corrosion Properties of Ti Doped Zn-Al Alloy Films

A Zn-Al-Ti material chip was fabricated by combinatorial technology using an ion beam sputtering method. The anti-corrosion properties of the Zn-Al alloy film and Ti doping effects on its corrosion resistance were investigated. High quality alloy films were obtained using low-temperature diffusion at 200 ℃ for 1 h combined with high-temperature crystallization at 370 ℃ for 2 h in Ar+5% (φ, volume fraction) H2 atmosphere. X-ray diffraction (XRD) and scanning electron microscope (SEM) were also used to characterize the structure and surface morphology of typical samples. The anti-corrosion behavior of samples was studied by electrochemical methods. Results indicated that the corrosion rate decreased markedly when a small amount of Ti was doped in the Zn-Al binary compositions. The Zn-Al-Ti alloy film doped with 6.0% (w, mass fraction) Ti (94.0% (w) Zn-Al with wAl:wZn=55%:45%) showed the best anti-corrosion behavior mainly because the small amount of Ti dopant developed fine grains, made the surface denser, and enhanced its passivation behavior.