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MoO3在Al2O3薄膜表面扩散的研究
引用本文:严京峰,吴念祖,张宏霞,谢有畅,唐有祺,朱永法,姚文清.MoO3在Al2O3薄膜表面扩散的研究[J].物理化学学报,1999,15(8):684-687.
作者姓名:严京峰  吴念祖  张宏霞  谢有畅  唐有祺  朱永法  姚文清
作者单位:College of Chemistry and Moleculr Engineering,Peking University,Beijing 100871,Analysisis Center of Tsinghua University,Beijing 100084
基金项目:国家自然科学基金!(29733080),攀登计划基金资助项目
摘    要:氧化物和盐类在高比表面载体上的单层分散现象已被大量实验所证实[1].MoO_3在γ-Al_2O_3等高比表面载体上的分散已经研究很多,近来的研究证实MoO3等在α-Al2O3等小比表面载体上也能自发单层分散[2],但是分散的过程仍然缺乏直接的观察研究.本工作通过多种表面分析方法首次研究了MoO3在平整无定形的Al2O3薄膜上的扩散过程以及影响因素.发现除温度升高外、水汽的存在对该扩散过程也有促进作用.1实验部分1.1样品的制备采用SS-3200真空磁控溅射镀膜机,通入Ar-O2作为反应气,直流磁控…

关 键 词:氧化物  表面扩散  扫描俄歇电子能谱  荧光元素分析  
收稿时间:1999-04-20
修稿时间:1999-06-03

Study of MoO_3 Surface Diffusion on the A1_2O_3 Film
Yan Jingfeng,Wu Nianzu,Zhang Hongxia,Xie Youchang,Tang Youqi.Study of MoO_3 Surface Diffusion on the A1_2O_3 Film[J].Acta Physico-Chimica Sinica,1999,15(8):684-687.
Authors:Yan Jingfeng  Wu Nianzu  Zhang Hongxia  Xie Youchang  Tang Youqi
Institution:College of Chemistry and Moleculr Engineering,Peking University,Beijing 100871|Analysisis Center of Tsinghua University,Beijing 100084
Abstract:A flat and compact Al2_O3 film of 20urn in thickness was prepared on the substrate of Si wafer by magnetic controlled sputtering Al reaction with O2 in Ar. A small amount of MoO3 was va- porized in vacuum and deposited onto a slot in a covering film on the surface of A12O3 film. The samples were heated in dry or wet N2, O2 and air respectively, characterized by TRSRF, AES, XPS, XRD and SEM to study the surface diffusion of MoO3 on the A12O3 film. The results show that MoO_3 can diffuse on the surface of Al_2O_3 film by heating the samples at 573K or 673K. The diffusion rate increases with the heating temperature. moisture can accelerate the diffusion rate of MoO_3 on the surface of Al_2O_3.
Keywords:Oxide  Surface diffusion  AES  TRSRF
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