MWPCVD低温合成纳米碳管的生长机理

The synthesis of carbon nanotubes (CNTs) at low temperature has received a great deal of attention and be-comes a challenging issue. But few model which accounts for the growth of CNTs is suited for the synthesis of CNTs by microwave plasma chemical vapor deposition (MWPCVD) at low temperature because most researchers conclude that the growth mechanism is determined by the catalyst-supporter interaction while ignored the diffusion of carbon in the catalyst. In this paper, under the catalytic effect of cobalt supported by SiO₂ and Al₂O₃, CNTs are synthe-sized by MWPCVD at about 500℃, and tip-growth, the model which accounts for the catalytic growth of CNTs is outlined. It is the temperature difference between the upper and bottom of the catalytic particle that results in the diffusion of carbon atoms from upper to the bottom, and precipitation of saturated carbon on the bottom surface to form CNTs.

Mechanism of Carbon Nanotubes Growth Through MWPCVD at Low Temperature