The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate |
| |
Authors: | Engin?Arslan Mustafa?K?Ozturk ?zgür?Duygulu Ali?Arslan?Kaya Suleyman?Ozcelik Ekmel?Ozbay |
| |
Institution: | (1) Department of Physics, Gazi University, 06500 Teknikokullar, Ankara, Turkey;(2) Department Mineral Analysis and Technology, MTA, 06520 Ankara, Turkey;(3) Nanotechnology Research Center, Department of Physics, Department of Electrical and Electronics Engineering, Bilkent University, 06800 Bilkent, Turkey;(4) Department of Physics, Kastamonu University, Kastamonu, Turkey |
| |
Abstract: | In the present paper, the effect of in-situ substrate nitridation time on crystalline quality of GaN films grown on Si (111)
substrates by metal organic chemical vapor deposition (MOCVD) were investigated. A thin buffer layer of silicon nitride (SiN
x
) with various thicknesses was achieved through the nitridation of substrate at different nitiridation times ranging from
0 to 660 s. The structural characteristics, such as dislocation densities, correlation lengths of columnar crystallites, the
tilt and twist of the mosaic structure, and the angles of rotational disorder, were all studied in detail by using a planar
and cross-sectional view of high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (HRXRD) performed
at different scattering geometries. It was found that the dislocation densities, lateral coherence lengths, vertical coherence
lengths, and the tilt and twist of mosaic blocks in GaN films monotonically varies with the nitridation time. The experimental
findings showed that the nitridation times had more influence on edge dislocation densities than the screw type. |
| |
Keywords: | PACS" target="_blank">PACS 61 05 Cp 61 72 Uj 64 70 Kg 68 37 Lp 68 37 Og 72 80 Ey 78 55 Cr |
本文献已被 SpringerLink 等数据库收录! |
|