Relaxed GexSi1−x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition |
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| Authors: | GL Luo PY Chen XF Lin P Tsien TW Fan |
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| Institution: | (1) International Cooperative Research Project of Japan Science Technology Corporation, c/o NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan, JP;(2) NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan, JP;(3) Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan, JP |
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| Abstract: | A mixture of as-grown single-wall carbon nanotubes (SWNTs) and a monochlorobenzene (MCB) solution of polymethylmethacrylate
(PMMA) was sonicated and homogenized. As a result, SWNTs were separated from carbonaceous impurities and metal particles,
which enabled us to purify the SWNTs by filtration. We also found that the number of short (about 1-μm) SWNTs and thin bundles
of SWNTs increased. The thin bundles contained one to three SWNTs. These short, thin SWNTs suspended in the MCB solution of
PMMA were spin-coated onto a Si wafer, and could be dispersed on it.
Received: 18 July 2000 / Accepted: 20 July 2000 / Published online: 6 September 2000 |
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| Keywords: | PACS: 81 05 Lg 81 05 Tp 81 05 Ys 81 20 Ym |
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