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Low-temperature synthesis of AlN films through electron cyclotron resonance plasma-aided reactive pulsed laser deposition |
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| Authors: | J Sun JD Wu ZF Ying W Shi ZY Zhou KL Wang XM Ding FM Li |
| Institution: | (1) State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Fudan University, Shanghai 200433, P.R. China, CN;(2) Institute of Modern Physics, Fudan University, Shanghai 200433, P.R. China, CN;(3) State key Laboratory of Applied Surface Physics, Fudan University, Shanghai 200433, P.R. China, CN |
| Abstract: | Combination of pulsed laser ablation with electron cyclotron resonance microwave discharge was demonstrated for a novel method for low-temperature thin film growth. Aluminum nitride thin films were synthesized on silicon substrates at temperatures below 80 °C by means of reactive pulsed laser deposition in nitrogen plasma generated from the electron cyclotron resonance discharge. The synthesized films show a very smooth surface and were found to have a stoichiometric AlN composition. X-ray photoelectron spectroscopy analysis evidenced the formation of aluminum nitride compound. Fourier transform infrared spectroscopy revealed the characteristic phonon modes of AlN. The AlN films were observed to be highly transparent in the visible and near-IR regions and have a sharp absorption edge near 190 nm. The band gap of the synthesized AlN films was determined to be 5.7 eV. The mechanisms responsible for the low-temperature film synthesis are also discussed in the paper. The nitrogen plasma facilitates the nitride formation and enhances the film growth. Received: 17 March 2000 / Accepted: 28 March 2000 / Published online: 23 May 2001 |
| Keywords: | PACS: 52 75 R 81 15 52 50 |
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