|
|||||
|
|
1.54 μm Emission of pulsed-laser deposited Er-doped films on Si |
|
| Authors: | S Lanzerstorfer J D Pedarnig R A Gunasekaran D Buerle W Jantsch |
| Institution: | a Johannes Kepler Universität Linz, Institut für Halbleiterphysik, A-4040 Linz, Germany b Johannes Kepler Universität Linz, Institut für Angewandte Physik, A-4040 Linz, Germany |
| Abstract: | We investigate the photoluminescence properties of Er-doped SiO2 and glass films fabricated by pulsed-laser deposition (PLD) for different deposition parameters and erbium host materials. The luminescence yield of SiO2 : Er films increases strongly with increasing oxygen background pressure during laser ablation. We compare SiO2 and soda-lime glass as host materials for erbium ions. Under identical growth conditions and the same erbium concentrations in both targets, films deposited from the soda-lime glass show a much higher luminescence yield. This enhancement is attributed to a higher concentration of optically active erbium in the multicomponent glass environment. |
| Keywords: | Thin film Pulsed-laser deposition Photoluminescence Erbium SiO2 : Er |
| 本文献已被 ScienceDirect 等数据库收录！ | |