Contactless Spectroscopy of Deep Levels in Semiconducting Materials: Gaas |
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| Authors: | I Davydov O Ivanov D Svircov G Georgiev A Odrinsky V Pustovoit |
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| Institution: | 1. Institute of Physics , St.-Peterburg University , Ulyanovskaya ul., 1, St.-Peterburg, 198904, Russia;2. Institute of Solid State Physics , Bulgarian Academy of Sciences , 72 Tzarigradsko Chaussee., Sofia, 1784, Bulgaria;3. Institute of Solid State and Semiconductor Physics , Byelorussian Academy of Sciences , Lyudnikova Prosp., 13, Vitebsk, 210717, Byelorussia;4. Institute of radioengineering and electronics , Academy of Sciences of the Russia , Mokhovaya str. 11, Moscow, GSP, 3,103 907, Russia |
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| Abstract: | Abstract The surface photo voltage (SPV) and photocurrent (PC) transients as a result of the excitation by the short high-intensity light pulses from semiconductor's intrinsic absorption spectral region are investigated in semi-insulating GaAs. It is shown that the mathematical convolution of SPV transients and arbitrary form double-pulse integrator (lock-in, double-boxcar) in a wide temperature range allows to receive the deep-level (DL) spectrum without the need to form electrical contacts to the crystal investigated. The use of such a procedure while scanning the crystal surface with a light spot at a temperature, corresponding to some DL maximum in the spectrum, makes possible the con tactless determination of this DL density distribution profile along the scanning direction. |
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| Keywords: | Deep levels Surface photovoltage GaAs Spectroscopy |
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