间隙原子对ZnNb2O6光电特性影响的第一性原理研究

基于密度泛函理论第一性原理，研究Zn、Nb、O间隙原子对ZnNb₂O₆体系光电特性的影响。分析显示：间隙原子对体系晶格畸变的影响与间隙原子几何尺寸有关。缺陷结构中，由于间隙原子电负性存在差异，也是产生晶格畸变的因素。光电特性分析显示：含有Zn、Nb间隙原子的体系表现为n型简并半导体。且Nb_i表现出较强的介电效应，主要与Nb的离子势与电离能有关。O_i表现为p型简并半导体，对光电效应贡献较小。结果表明Nb_i体系有良好的光电特性，在实际应用中具有较大潜力。

First-principles Study of Electronic Structure and Optical Properties of ZnNb2O6 with Interstitial Atoms

With first-principles calculation of density functional theory, we investigate influence of interstitial atoms Zn, Nb and O on photoelectric characteristics of ZnNb₂O₆ system. It shows that lattice distortion of the defect structure is related to atomic size. However, as defect structure is formed due to electronegative differences of the interstitial atoms, length of bonds in the system changes. Systems containing interstitial atoms Zn and Nb show characteristics of a degenerate n-type semiconductor. Nb interstitial atom system shows a strong dielectric effect. By contrast, the O interstitial atom system, which is characterised by a degenerate p-type semiconductor, barely contributes to photoelectricity. It shows that the Nb interstitial atom system has potential in practical application.