Pressure-induced novel structure with graphene-like boron-layer in titanium monoboride

The recent discovery of the novel boron-framework in boron-rich metal borides with complex structures and intriguing features under high pressure has stimulated the search into the unique boron-network in the metal monoborides or boron-deficient metal borides at high pressure. Herein, based on the particle swarm optimization algorithm combined with first-principles calculations, we thoroughly explored the structural evolution and properties of TiB up to 200 GPa. This material undergoes a pressure-induced phase transition of $Pnma$ $\to $ $Cmcm$ $\to $ $Pmmm$. Besides of two known phases $Pnma$ and $Cmcm$, an unexpected orthorhombic $Pmmm$ structure was predicted to be energetically favored in the pressure range of 110.88-200 GPa. Intriguingly, the B covalent network eventually evolved from a one-dimensional zigzag chain in $Pnma$-TiB and $Cmcm$-TiB to a graphene-like B-sheet in $Pmmm$-TiB. On the basis of the microscopic hardness model, the calculated hardness ($H_{\rm v}$) values of $Pnma$ at 1 atm, $Cmcm$ at 100 GPa, and $Pmmm$ at 140 GPa are 36.81 GPa, 25.17 GPa, and 15.36 GPa, respectively. Remarkably, analyses of the density of states, electron localization function and the crystal orbital Hamilton population (COHP) exhibit that the bonding nature in the three TiB structures can be considered as a combination of the B-B and Ti-B covalent interactions. Moreover, the high hardness and excellent mechanical properties of the three TiB polymorphs can be ascribed to the strong B-B and Ti-B covalent bonds.     

Theory prediction of the electronic structure,mechanical and thermodynamic properties of Ca5Pd6Ge6 under pressure

The electronic structures, mechanical and thermodynamic properties of Ca₅Pd₆Ge₆ under pressure have been investigated via the first-principles calculations. The optimised lattice constant was in good agreement with the experimental data. Resulting from the Ca-3d, Ge-4p and Pd-4d states contribution, at the Fermi level, the Ca₅Pd₆Ge₆ exhibits metallic behaviour. The elastic constants were calculated, and the result implies that Ca₅Pd₆Ge₆ was mechanically stable below 50?GPa. The polycrystalline modulus increases almost linearly with pressure. The B/G ratio indicated that Ca₅Pd₆Ge₆ was brittle, and the brittle to ductile transition occurs at 2.5?GPa. Furthermore, the Debye temperature θ_D, the minimum thermal conductivity K was obtained. Finally, the isochoric heat capacity C_v and entropy S were evaluated by the quasi-harmonic Debye model in consideration for the temperature effect.     

石墨烯纳米网电导特性的能带机理：第一原理计算

通过第一原理电子结构计算来研究有序多孔纳米网的电导特性变化的能带机理.能带结构分析结果表明:石墨烯纳米网超晶格(3m,3n)(m和n为整数)的电子本征态在布里渊区中心点发生四重简并;碳空位孔洞规则排列形成的石墨烯纳米网具有由简并态分裂形成的宽度可调带隙,无论石墨烯的两个子晶格是否对等.在具有磁性网孔阵列的石墨烯纳米网中,反铁磁耦合使对称子晶格的反演对称性增加了一项量子限制条件,导致能带结构在K点的二重简并态分裂成带隙.通过控制网孔密度能够有效调节石墨烯纳米网的带隙宽度,为实现新一代石墨烯纳米电子器件提供了理论依据.     

Ti0.33WO3电子结构和太阳辐射屏蔽性能第一性原理研究

节能减排已成为当今社会发展的主题,对节约能源、提高太阳能的高效综合利用的新型窗用透明隔热材料的理论设计和研究尤其重要.本文采用基于密度泛函理论的计算方法,研究了六方相三氧化钨Ti掺杂前、后的晶格参数、电子能带结构、形成能和光学性质.研究结果表明,Ti掺杂后晶格体积增大,系统能量降为负值,体系具有更好的稳定性;掺杂后电子能带结构发生很大的变化,但材料仍保持n型电导率;随之,其光学性质也发生改变,掺杂前h-WO3无近红外吸收性能,掺杂后的Ti0.33WO3具有很强的近红外吸收性能.在此基础上研究了Ti掺杂h-WO3前、后的太阳辐射屏蔽性能,掺杂前无太阳辐射屏蔽性能;掺杂后的Ti0.33WO3薄膜具有可见光高透明、近红外屏蔽的性能.计算结果为Ti掺杂h-WO3在窗用透明隔热材料方面的研究提供了理论依据.     

Theoretical investigation of the crystallographic structure,anisotropic elastic response,and electronic properties of the major borides in Ni-based superalloys

ABSTRACT

In Ni-based superalloys, it is usually found that borides can strengthen the grain boundaries, thereby resulting in an increase in mechanical strength and high-temperature creep properties. Due to their importance and prevalence in Ni-based superalloys, this study employs first-principles methods to investigate the crystallographic structure, anisotropic elastic response, and electronic properties of the major borides, such as M₂B, M₅B₃ and M₃B₂ (M: Cr, Mo, W), respectively, which is necessary for the assessment of complex mechanical responses of Ni-based superalloys. The results demonstrate that the studied borides are all thermodynamically and mechanically stable. Among the M _x B _y binary borides analysed, Cr _x B _y exhibits the largest shear modulus, Young’s modulus, and Vicker hardness values, and these properties increase with the increase of B contents. The studied borides display nearly isotropic elastic properties except for W₅B₃ and W₃B₂. The electronic structure analysis of M _x B _y shows that the strong hybridisation between M-d and B-p orbitals leads to these borides exhibiting higher theoretical hardness, and the overlapping peaks of M-d and B-p orbitals move to a lower energy area with the increase of B contents, which leads to the increase of shear and Young’s moduli of M _x B _y . Furthermore, for M₃B₂ borides, the Cr-B bonds and Cr–Cr bonds are much stronger than the W-B & Mo-B bonds, and W-W & Mo-Mo bonds, respectively, which leads to Cr _x B _y yielding the largest values of elastic moduli.     

无机钙钛矿太阳能电池Cs2SnI6的电子结构和光学性质的第一性原理研究

近年来,Cs2SnI6作为一种无毒性、稳定性好的新型钙钛矿材料应用于太阳能电池中,其电池的光电转换效率由最初不到1%增长到现在的8.5%,使之成为有可能替代铅基钙钛矿太阳能电池的新型太阳能电池。本文采用基于广义密度泛函和杂化密度泛函的第一性原理方法研究了Cs2SnI6的电子结构、光学特性和钙钛矿太阳能电池的光电性能参数。研究结果表明,导带底和价带顶位于同一高对称点Γ而属于直接跃迁型半导体,且电子态主要来自于I-5p轨道和Sn-5s轨道。在近红外和可见光波长范围内有较高的吸收系数,当Cs2SnI6钙钛矿厚度达到10μm时,吸收率在311~989 nm之间接近100%,不考虑潜在损失的情况下,理论上太阳能电池可获得短路电流为32.86 mA/cm2、开路电压0.91 V、填充因子87.4%、光电转换效率26.1%。为实验上制备高效Cs2SnI6钙钛矿太阳能电池提供了参考。     

硫钒铜矿化合物电子结构和电致变色特性的第一原理研究

基于密度泛函的第一原理赝势平面波方法，计算晶体结构、电子结构和光学性质，研究硫钒铜矿化合物Cu₃VS₄、Cu₃NbS₄和Cu₃TaS₄的电子输运及电致变色特性，探讨作为透明半导体材料应用于太阳能电池和电致变色器件的可能性.电子结构的计算表明这类化合物是间接带隙半导体，其电子能带的导带底和价带顶分别位于布里渊区的X点和R点.价带顶的电子本征态主要来自于Cu原子的d电子轨道，而导带底电子态主要来源于VB族元素原子的d电子轨道.能带结构、电荷布居分析、电子局域化函数和光吸收及反射谱的计算表明这些硫钒铜矿化合物属于极性共价半导体，具有较高的电荷迁移率和优良的电致变色特性，可应用于高效电致变色器件.     

一维线性非共轭石墨烯基(CH2)n分子链的电子输运

一维非共轭烷烃链虽不具富电子或少电子特征,但常存在于单分子器件或多肽、蛋白质等生物分子中,对电子传输产生重要影响.为理解这类物质的电子输运特征,本研究设计了一维线性非共轭(CH2)n分子结模型,并利用密度泛函理论结合非平衡态格林函数的方法,对(CH2)n(n=1-12)线性分子链与两个石墨烯电极耦合而成的分子结进行了第一性原理计算.结果表明,CH2分子链随着n值的变化,其电导值表现出明显的奇偶振荡现象,并且随着链长的增加呈指数级的衰减,这一结果与实验研究取得了很好的一致性,为理解和设计性能更加优良的单分子器件提供了重要理论依据.     

Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles

According to the one-dimensional quantum state distribution, carrier scattering, and fixed range hopping model, the structural stability and electron transport properties of N-, P-, and As-doped SiC nanowires(N-SiCNWs, P-SiCNWs, and As-SiCNWs) are simulated by using the first principles calculations. The results show that the lattice structure of NSiCNWs is the most stable in the lattice structures of the above three kinds of doped SiCNWs. At room temperature,for unpassivated SiCNWs, the doping effect of P and As are better than that of N. After passivation, the conductivities of all doped SiCNWs increase by approximately two orders of magnitude. The N-SiCNW has the lowest conductivity. In addition, the N-, P-, As-doped SiCNWs before and after passivation have the same conductivity–temperature characteristics,that is, above room temperature, the conductivity values of the doped SiCNWs all increase with temperature increasing.These results contribute to the electronic application of nanodevices.     

Effect of defects on the electronic structure of a PbI2/MoS2 van der Waals heterostructure: A first-principles study

PbI2/MoS2,as a typical van der Waals(vdW)heterostructure,has attracted intensive attention owing to its remarkable electronic and optoelectronic properties.In this work,the effect of defects on the electronic structures of a PbI2/MoS2 heterointerface has been systematically investigated.The manner in which the defects modulate the band structure of PbI2/MoS2,including the band gap,band edge,band alignment,and defect energy-level density within the band gap is discussed herein.It is shown that sulfur defects tune the band gaps,iodine defects shift the positions of the band edge and Fermi level,and lead defects realize the conversions between the straddling-gap band alignment and valence-band-aligned gap,thus enhancing the light-absorption ability of the material.