| Cu（In,Ga）Se2 Thin Films on Flexible Polyimide Sheet： Structural and Electrical Properties versus Composition |
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| 引用本文： | 张力,何青,姜伟龙,李长健,孙云.Cu（In,Ga）Se2 Thin Films on Flexible Polyimide Sheet： Structural and Electrical Properties versus Composition[J].中国物理快报,2009,26(2):215-218. |
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| 作者姓名： | 张力 何青 姜伟龙 李长健 孙云 |
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| 作者单位： | The Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071 |
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| 基金项目： | Supported by the National High-Tech Research and Development Programme of China under Grant No 2004AA513020. |
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| 摘 要： | The structural and electrical properties of Cu（In,Ga）Se2 （CIGS） films grown on polyimide （PI） sheet using the three-stage co-evaporation process are investigated by x-ray diffraction spectra （XRD）, scanning electron microscopy （SEM）, Raman spectra, and Hall effect measurements, respectively. The results show that the properties of CIGS films on PI sheet are strongly dependent on the compositional ratio of Cu/（In＋Oa） （Cu/Ⅲ）. In contrast to the non-stoichiometric CIGS films, stoichiometric CIGS films show better structural and electrical properties, such as a relatively larger grain size, lower resistivity and higher carrier concentration. The flexible CIGS solar cells on PI sheet with the conversion efficiencies of 9.7% and 6.6% are demonstrated for the CIGS absorber layer with Cu/Ⅲ of 0.96 and 0.76, respectively （active area, 0.20cm^2）. The cell efficiency for Cu-poor CIGS films is limited by a relatively lower open circuit voltage and fill factor.
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| 关 键 词： | CIGS薄膜 电学性能 聚酰亚胺 柔性板 结构 非化学计量比 扫描电子显微镜 资产负债表 |
| 收稿时间： | 2008-9-9 |
Cu(In, Ga)Se2 Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties versus Composition |
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| ZHANG Li,HE Qing,JIANG Wei-Long,LI Chang-Jian,SUN Yun.Cu(In, Ga)Se2 Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties versus Composition[J].Chinese Physics Letters,2009,26(2):215-218. |
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| Authors: | ZHANG Li HE Qing JIANG Wei-Long LI Chang-Jian SUN Yun |
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| Institution: | The Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071 |
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| Abstract: | The structural and electrical properties of Cu(In,Ga)Se2 (CIGS) films grown on polyimide (PI) sheet using the three-stage co-evaporation process are investigated by x-ray diffraction spectra (XRD), scanning electron microscopy (SEM), Raman spectra, and Hall effect measurements, respectively. The results show that the properties of CIGS films on PI sheet are strongly dependent on the compositional ratio of Cu/(In+Ga) (Cu/III). In contrast to the non-stoichiometric CIGS films, stoichiometric CIGS films show better structural and electrical properties, such as a relatively larger grain size, lower resistivity and higher carrier concentration. The flexible CIGS solar cells on PI sheet with the conversion efficiencies of 9.7% and 6.6% are demonstrated for the CIGS absorber layer with CuIII of 0.96 and 0.76, respectively (active area, 0.20cm2). The cell efficiency for Cu-poor CIGS films is limited by a relatively lower open circuit voltage and fill factor. |
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| Keywords: | 68 55 J- 73 61 -r 84 60 Jt 81 05 Bx |
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