| Characteristics of High In-Content InGaN Alloys Grown by MOCVD |
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| 作者姓名： | 朱学亮 郭丽伟 于乃森 彭铭曾 颜建锋 葛炳辉 贾海强 陈弘 周均铭 |
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| 作者单位： | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy ot Sciences. Beijing 100080 |
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| 基金项目： | Supported by the Knowledge Innovation Project of Chinese Academy China under Grant Nos 10474126 and 10574148, the National Key Basic Grant No 2002CB311900. |
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| 摘 要： | InN and In0.46 Ca0.54N films are grown on sapphire with a CaN buffer by metalorganic chemical vapour deposition （MOCVD）. Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 4 75 cm^2V^-1s^-1 and that oflno.46 Gao.54N is 163 cm^2 V^-1s^-1. Room-temperat ure photoluminescence measurement of the InN film shows a peak at 0.72eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells.
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| 关 键 词： | InN膜 In0.46 Ca0.54N膜 MOCVD法 晶体生长 铟含量 太阳电池 |
| 收稿时间： | 2006-06-09 |
| 修稿时间： | 2006-06-09 |
Characteristics of High In-Content InGaN Alloys Grown by MOCVD |
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| ZHU Xue-Liang,GUO Li-Wei,YU Nai-Sen,PENG Ming-Zeng,YAN Jian-Feng,GE Bing-Hui,JIA Hai-Qiang,CHEN Hong,ZHOU Jun-Ming.Characteristics of High In-Content InGaN Alloys Grown by MOCVD[J].Chinese Physics Letters,2006,23(12):3369-3372. |
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| Authors: | ZHU Xue-Liang GUO Li-Wei YU Nai-Sen PENG Ming-Zeng YAN Jian-Feng GE Bing-Hui JIA Hai-Qiang CHEN Hong ZHOU Jun-Ming |
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| Institution: | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100080 |
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| Abstract: | InN and In0.46Ga0.54N films are grown on sapphire with a GaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 475 cm2V-1s-1 and that of In0.46Ga0.54 is 163 cm2V-1s-1;. Room-temperature photoluminescence measurement of the InN film shows a peak at 0.72 eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells. |
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| Keywords: | 81 15 Gh 61 10 Nz 68 37 Ps |
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