| Photoluminescence of ZnO and Mn-Doped ZnO Polycrystalline Films Prepared by Plasma Enhanced Chemical Vapour Deposition |
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| 作者姓名： | 林应斌 杨艳敏 徐建萍 刘兴翀 王建峰 黄志高 张凤鸣 都有为 |
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| 作者单位： | [1]National Laboratory of Solid State Microstructures, Jiangsu Provincial Laboratory for Nanotechnology, Department of Physics, Nanjing University, Nanjing 210093 [2]Department of Physics, Fujian Normal University, Fuzhou 350007 |
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| 基金项目： | Supported by the National Key Basic Research Programme of China under Grant No 2005CB623605, and the National Natural Science Foundation of China under Grant Nos 10374044 and 60676055. |
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| 摘 要： | ZnO and Mn-doped ZnO polycrystalline films are prepared by plasma enhanced chemical vapour deposition at low temperature （220℃）, and room-temperature photoluminescence of the films is systematically investigated. Analysis from x-ray diffraction reveals that a11 the prepared films exhibit the wurtzite structure of ZnO, and Mndoping does not induce the second phase in the films. X-ray photoelectron spectroscopy confirms the existence of Mn^2＋ ions in the films rather than metalic Mn or Mn^4＋ ions. The emission efficiency of the ZnO film is found to be dependent strongly on the post-treatment and to degrade with increasing temperature either in air or in nitrogen ambient. However, the enhancement of near band edge （NBE） emission is observed after hydrogenation in ammonia plasma, companied with more defect-related emission. Furthermore, the position of NBE shifts towards to high-energy legion with increasing Mn-doped concentration due to Mn incorporation into ZnO lattice.
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| 关 键 词： | 光致发光 ZnO 多晶体 薄膜 等离子体 |
| 收稿时间： | 2007-3-18 |
| 修稿时间： | 2007-03-18 |
Photoluminescence of ZnO and Mn-Doped ZnO Polycrystalline Films Prepared by Plasma Enhanced Chemical Vapour Deposition |
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| LIN Ying-Bin,YANG Yan-Min,XU Jian-Ping,LIU Xing-Chong,WANGJian-Feng,HUANG Zhi-Gao,ZHANG Feng-Ming,DU You-Wei.Photoluminescence of ZnO and Mn-Doped ZnO Polycrystalline Films Prepared by Plasma Enhanced Chemical Vapour Deposition[J].Chinese Physics Letters,2007,24(9):2685-2688. |
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| Authors: | LIN Ying-Bin YANG Yan-Min XU Jian-Ping LIU Xing-Chong WANGJian-Feng HUANG Zhi-Gao ZHANG Feng-Ming DU You-Wei |
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| Institution: | 2. National Laboratory of Solid State Microstructures, Jiangsu Provincial Laboratory for Nanotechnology, Department of Physics, Nanjing University, Nanjing 210093 ; 1 Department of Physics, Fujian Normal University, Fuzhou 350007 |
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| Abstract: | ZnO and Mn-doped ZnO polycrystalline films are prepared by plasmaenhanced chemical vapour deposition at low temperature (220°C), androom-temperature photoluminescence of the films is systematically investigated. Analysis from x-ray diffraction reveals that all the prepared filmsexhibit the wurtzite structure of ZnO, and Mn-doping does not induce thesecond phase in the films. X-ray photoelectron spectroscopy confirms theexistence of Mn2+ ions in the films rather than metallic Mn or Mn4+ ions. The emission efficiency of the ZnO film is found to be dependent strongly on the post-treatment and to degrade with increasing temperature either in air or in nitrogen ambient. However, the enhancement of near band edge (NBE) emission is observed after hydrogenation in ammonia plasma, companied with more defect-related emission. Furthermore, the position of NBE shifts towards to high-energy legion with increasing Mn-doped concentration due to Mn incorporation into ZnO lattice. |
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| Keywords: | 81 15 Gh 75 50 Pp 78 55 -m |
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