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Formation for Bass-Relief Microprofiles Based on an Analytic Formulation
作者姓名:史立芳  董小春  邓启凌  罗先刚  杜春雷
作者单位:State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, PO Box 350, Chengdu 610209
基金项目:Supported by the National Basic Research Programme of China under Grant No 2006CB302900, and National Natural Science Foundation of China under Grant Nos 60507014 and 60678035.
摘    要:A method of fast design and fabrication for bass-relief micro-profiles is developed by using an analytic formulation to determine the exposure distribution. Based on an equivalent exposure threshold model, the formulation is simplified for the case of bass-relief profile corresponding to the smaller exposure dose. The mask function for a microlens array is designed without iteration involved by the analytic formulation. The experiment is performed to validate the method, and the fabrication result is obtained with the profile error less than 30nm (rms).

关 键 词:感光材料  光学应用  显微镜  光学技术
收稿时间:2007-6-15
修稿时间:2007-07-15

Formation for Bass-Relief Microprofiles Based on an Analytic Formulation
SHI Li-Fang,DONG Xiao-Chun,DENG Qi-Ling,LUO Xian-Gang,DU Chun-Lei.Formation for Bass-Relief Microprofiles Based on an Analytic Formulation[J].Chinese Physics Letters,2007,24(10):2867-2869.
Authors:SHI Li-Fang  DONG Xiao-Chun  DENG Qi-Ling  LUO Xian-Gang  DU Chun-Lei
Institution:State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, PO Box 350, Chengdu 610209
Abstract:A method of fast design and fabrication for bass-relief micro-profiles is developed by using an analytic formulation to determine the exposure distribution. Based on an equivalent exposure threshold model, the formulation is simplified for the case of bass-relief profile corresponding to the smaller exposure dose. The mask function for a microlens array is designed without iteration involved by the analytic formulation. The experiment is performed to validate the method, and the fabrication result is obtained with the profile error less than 30nm (rms).
Keywords:42  79  Bh
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