Fine structure splitting and biexciton binding energy in single self-assembled InAs/AlAs quantum dots |
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Authors: | D Sarkar HP van der Meulen JM Calleja JM Becker RJ Haug K Pierz |
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Institution: | aDepartamento de Física de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid, Spain;bInstitut für Festkörperphysik, Universität Hannover, D-30167 Hannover, Germany;cPhysikalisch-Technische Bundesanstalt Braunschweig, D-38116 Braunschweig, Germany |
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Abstract: | We report on photoluminescence investigations of individual InAs quantum dots embedded in an AlAs matrix which emit in the visible region, in contrast to the more traditional InAs/GaAs system. Biexciton binding energies, considerably larger than for InAs/GaAs dots, up to 9 meV are observed. The biexciton binding energy decreases with decreasing dot size, reflecting a possible crossover to an antibinding regime. Exciton and biexciton emission consists of linearly cross polarized doublets due to a large fine structure splitting up to 0.3 meV of the bright exciton state. With increasing exciton transition energy the fine structure splitting decreases down to zero at about 1.63 eV. Differences with InAs/GaAs QDs may be attributed to major dot shape anisotropy and/or larger confinement due to higher AlAs barriers. |
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Keywords: | Biexcitons Single quantum dots III– V semiconductors Photoluminescence |
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