| Light induced microstructure transformation in a-Si：H films |
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| 引用本文： | 刘国汉,丁毅,张文理,陈光华,贺德衍,邓金祥.Light induced microstructure transformation in a-Si：H films[J].中国物理 B,2007,16(4):1125-1128. |
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| 作者姓名： | 刘国汉 丁毅 张文理 陈光华 贺德衍 邓金祥 |
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| 作者单位： | School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
sjb)Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China;School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;The Key Laboratory of Advanced Functional Materials,
Ministry of Education of China, Beijing University of Technology,
Beijing 100022, China;The Key Laboratory of Advanced Functional Materials,
Ministry of Education of China, Beijing University of Technology,
Beijing 100022, China;School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;The Key Laboratory of Advanced Functional Materials,
Ministry of Education of China, Beijing University of Technology,
Beijing 100022, China |
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| 基金项目： | Project supported by the National Basic Research Program of China (Grant No G2000028201). |
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| 摘 要： | A series of a-Si：H films are deposited by hot wire assisted microwave electron cyclotron resonant chemical vapour deposition （HW-MWECR-CVD）, subsequently exposed under simulated illumination for three hours. This paper studies the microstructure change during illumination by Fourier Transformation Infrared （FTIR） spectra. There are two typical transformation tendencies of microstructure after illumination. It proposes a model of light induced structural change based on the experimental results. It is found that all samples follow the same mechanism during illumination, and intrinsic structure of samples affect the total H content.
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| 关 键 词： | 非晶态氢化硅 薄膜 光致显微结构转变 Staebler-Wronski效应 |
| 收稿时间： | 2006-05-23 |
| 修稿时间： | 2006-05-232006-08-24 |
Light induced microstructure transformation in a-Si:H films |
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| Liu Guo-Han,Ding Yi,Zhang Wen-Li,Chen Guang-Hu,He De-Yan and Deng Jin-Xiang.Light induced microstructure transformation in a-Si:H films[J].Chinese Physics B,2007,16(4):1125-1128. |
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| Authors: | Liu Guo-Han Ding Yi Zhang Wen-Li Chen Guang-Hu He De-Yan and Deng Jin-Xiang |
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| Institution: | 1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;2. Institute of Sensor Technology,, Gansu Academy of Sciences, Lanzhou 730000, China ;3.The Key Laboratory of Advanced Fhnctional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100022, China |
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| Abstract: | A series of a-Si:H films are deposited by hot wire assisted microwave
electron cyclotron resonant chemical vapour deposition
(HW-MWECR-CVD), subsequently exposed under simulated illumination for
three hours. This paper studies the microstructure change during
illumination by Fourier Transformation Infrared (FTIR) spectra. There
are two typical transformation tendencies of microstructure after
illumination. It proposes a model of light induced structural change
based on the experimental results. It is found that all samples
follow the same mechanism during illumination, and intrinsic
structure of samples affect the total H content. |
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| Keywords: | hydrogenated amorphous silicon Staebler--Wronski effect microwave electron cyclotron resonant
chemical vapour deposition |
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