| Si基Ge异质结构发光器件的研究进展 |
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| 引用本文： | 刘智,李传波,薛春来,成步文.Si基Ge异质结构发光器件的研究进展[J].中国光学,2013(4):449-456. |
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| 作者姓名： | 刘智 李传波 薛春来 成步文 |
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| 作者单位： | 中国科学院半导体研究所集成光电子学国家重点实验室,北京100083 |
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| 基金项目： | 国家重大基础研究计划（973计划）资助项目（No.2013CB632103）; 国家自然科学基金资助项目（No.61036003,No.61176013,No.61177038） |
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| 摘 要： | 近年来,与Si的CMOS工艺相兼容的Ge/Si异质结构发光器件取得很多重要的进展。本文概述了Si基Ge异质结构发光器件的最新成果,如Ge/Si量子点发光二极管、Si衬底上的Ge发光二极管及激光器和Ge/SiGe多量子阱发光二极管,分别描述了这些器件的特点和增强其发光特性的途径。最后展望了Si基Ge异质结构发光器件的发展趋势,指出尽管Si基Ge异质结构发光器件获得了很大的发展,但是器件的发光效率仍然很低,离实用还有一定距离,还需要在材料和器件的结构方面有更多的创新。
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| 关 键 词： | 发光器件 发光二极管 Ge Ge Si量子点 Ge SiGe量子阱 |
Progress in Ge/Si heterostructures for light emitters |
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| LIU Zhi,LI Chuan-bo,XUE Chun-lai,CHENG Bu-wen.Progress in Ge/Si heterostructures for light emitters[J].Chinese Optics,2013(4):449-456. |
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| Authors: | LIU Zhi LI Chuan-bo XUE Chun-lai CHENG Bu-wen |
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| Institution: | (State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China) |
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| Abstract: | Due to the compatibility of Si-based light emitters with Si CMOS processes,Ge /Si heterostructures based light emitters have developed significantly.This paper reviews the most recent progress of this field,including Ge / Si Quantum Dot（QD） Light Emitting Diode（LED）,Ge light emitting diode on Si,Ge laser on Si,and Ge / SiGe Multiple Quantum Well（MQW） light emitting diode.It describes the characteristics of these light emitting devices and how to enhance their luminescent properties.Finally,it discusses the challenges and opportunities associated with these approaches and suggests that much innovation should be promoted in material and device structures. |
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| Keywords: | light emitter light emitting diode Ge Ge /Si quantum dot Ge /SiGe multiple quantum well |
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