化学水浴法和磁控溅射法制备硫化镉薄膜的性能研究

以氯化铵、氯化镉、氢氧化钾和硫脲为反应物采用化学水浴法制备了硫化镉薄膜,为了作对比研究,采用射频磁控溅射以硫化镉为靶材,氩气为溅射气体,制备了硫化镉薄膜。采用X射线衍射、扫描电子显微镜和紫外-可见光光谱仪分别表征了硫化镉薄膜的结构、形貌和光学吸收特性。结果表明,采用以上两种方法制备的硫化镉均具有(002)择优取向,溅射法制备的硫化镉薄膜较致密,薄膜表面较光滑,平均晶粒尺寸在20～30nm;水浴法制备的硫化镉薄膜颗粒尺寸较小,缺陷较多。除了在短波段溅射所得硫化镉薄膜的透过率略差于水浴法所得硫化镉薄膜之外,溅射法制备的硫化镉薄膜的性能整体上优于水浴法制备的薄膜。两种方法制备的硫化镉薄膜的能隙在2.3～2.5eV。

Comparative study on thin films of cadmium sulfide prepared by chemical bath deposition and radio frequency magnetron sputtering

Thin films of cadmium sulfide (CdS) were prepared with ammonium chloride, cadmium chloride, potassium hydroxide and thiourea by chemical bath deposition (CBD). For comparison, CdS films were also deposited by radio frequency (RF) magnetron sputtering, using CdS and argon as a target and reactive gas, respectively. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and ultraviolet-visible spectroscopy. The results show that the CdS films prepared by the above two methods have (002) orientation, the CdS films deposited by RF magnetron sputtering are more compact and much smoother than those prepared by CBD, and have lager crystalline size of about 20-30 nm. The CdS films prepared by CBD have smaller crystalline size and more defects. The properties of CdS thin films prepared by RF magnetron sputtering are totally superior to those of CdS films by CBD, but the optical transmittance of CdS thin films at short wavelength is an exception. The energy gap of CdS films prepared by the two methods are all in the range of 2.3-2.5 eV.