| 锌掺杂产导体材料的共振电离质谱分析 |
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| 引用本文： | 彭慰先,郭川.锌掺杂产导体材料的共振电离质谱分析[J].光谱学与光谱分析,1999,19(1):16-18. |
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| 作者姓名： | 彭慰先 郭川 |
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| 作者单位： | [1]吉林大学物理系 [2]中国科学院长春应用化学研究所 |
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| 摘 要： | 本文简要地描述了激光共振电离质谱的实验装置的测量方法，给出了用共振电离质谱方法对锌掺杂化合物半导体材料进行分析的光谱和质谱图，并估计了用这种方法进行奶量分析可能达到的检测限
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| 关 键 词： | 半导体 锌掺杂 RIMS 光谱 质谱 |
Trace Analysis of Zn doped Compound Semiconductor Material by Resonant Ionization Mass Spectrometry |
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| Weixian PENG and Zhankui JIANG Dpartment of Physics,Jilin University, Changchun Chuan GUO Changchun Institute of Applied Chemistry,Chinese Academy of Sciences, Changchun Ledingham K W D.Trace Analysis of Zn doped Compound Semiconductor Material by Resonant Ionization Mass Spectrometry[J].Spectroscopy and Spectral Analysis,1999,19(1):16-18. |
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| Authors: | Weixian PENG and Zhankui JIANG Dpartment of Physics Jilin University Changchun Chuan GUO Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun Ledingham K W D |
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| Institution: | Department of Physics, Jilin University, 130023 Changchun. |
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| Abstract: | An experimental setup and the procedure for the laser resonant ionization mass spectrometry(RIMS) have been described.Both an optical spectrum and a mass spectum have been shown.The detection limit that can be reached by using this procedure has been estimated. |
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| Keywords: | Resonant ionization mass spectrometry Semiconductor Zn |
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