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Island distance in one-dimensional epitaxial growth |
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| Authors: | H Kallabis PL Krapivsky DE Wolf |
| Institution: | FB 10, Theoretische Physik, Gerhard-Mercator-Universit?t Duisburg, 47048 Duisburg, Germany, DE Center for Polymer Studies, Boston University, Boston, 02215 MA, USA, US |
| Abstract: | The typical island distance in submonolayer epitaxial growth depends on the growth conditions via an exponent . This exponent is known to depend on the substrate dimensionality, the dimension of the islands, and the size i* of the critical nucleus for island formation. In this paper we study the dependence of on i* in one-dimensional epitaxial growth. We derive that for and confirm this result by computer simulations. Received: 26 May 1998 / Accepted: 23 June 1998 |
| Keywords: | PACS 81 15 z Methods of deposition of films and coatings film growth and epitaxy - 81 10 Bk Growth from vapor - 05 50 +q Lattice theory and statistics Ising problems |
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