| 高密度封装二极管激光器阵列 |
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| 引用本文： | 高松信,武德勇,吕文强,雷军,唐淳,刘永智.高密度封装二极管激光器阵列[J].强激光与粒子束,2008,20(9). |
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| 作者姓名： | 高松信 武德勇 吕文强 雷军 唐淳 刘永智 |
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| 作者单位： | 1. 中国工程物理研究院 应用电子学研究所， 四川 绵阳 621900;2. 电子科技大学 光电信息学院， 成都 610054 |
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| 基金项目： | 中国物理研究院科研项目 |
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| 摘 要： | 理论模拟了自制的高效冷却器的散热能力，分析了单元封装结构所需材料的导热特性，获得了高功率二极管激光器在高功率密度、高占空比条件下运行的可行性。改进了高密度封装的关键工艺，热沉金属化层达到了3~5 mm,焊料厚度为4~7 mm，封装间距0.6 mm，采用峰值功率1 kW的背冷式叠阵二极管激光器。实验测试结果表明:封装的二极管激光器叠阵单元的整体封装热阻为0.115 ℃/W，有良好的散热能力;该叠阵模块在电流为100 A、占空比15%时，输出峰值功率为986 W，峰值功率密度达到1.5 kW/cm2，平均每个板条的斜效率为1.25 W/A,激光器阈值电流为20 A左右。
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| 关 键 词： | 二极管激光器 高密度封装 背冷式叠阵 热沉 热阻 |
| 收稿时间： | 1900-01-01; |
High density packaging diode laser |
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| GAO Song-xin,WU De-yong,L Wen-qiang,LEI Jun,TANG Chun,LIU Yong-zhi.High density packaging diode laser[J].High Power Laser and Particle Beams,2008,20(9). |
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| Authors: | GAO Song-xin WU De-yong L Wen-qiang LEI Jun TANG Chun LIU Yong-zhi |
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| Institution: | 1. Institute of Applied Electronics, CAEP, P.O.Box 919-1013, Mianyang 621900, China;2. School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | The heat dispersion of a cooler which we made was theoretically simulated and the thermal conductivity of the packaging material was analyzed. It was proved the diode laser could operate in high power density and high duty cycle. The key technique for high density packaging was improved. The thickness of the gilded heat sink was 3~5 mm, and that of the solder was 4~7 mm. The thermal resistance of the packaged LD bar was 0.115 ℃/W. The output power of the diode laser arrays was 986 W when the current was 100 A and the duty cycle 15%. The slope efficiency of each bar was 1.25 W/A and the current threshold was about 20 A. The peak power density could be as high as 1.5 kW/cm2 when the duty-cycle was 15%. |
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| Keywords: | High density packaging Passive cooling stack Heat sink Thermal resistance |
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