纳米TiO_2薄膜的低温等离子体制备技术

以四氯化钛为源物质,氩气为载气,氧气为反应气体,利用低温等离子体增强化学气相沉积在硅基表面制备出了TiO2薄膜。使用场发射扫描电子显微镜、X射线衍射仪等检测分析表征TiO2薄膜的性能与性质,并探讨了工艺条件如基片材料、沉积时间和基片温度对薄膜性能的影响。结果表明:制备的薄膜表面光滑均匀,结构致密,最小晶粒尺寸约15 nm;薄膜的晶型主要依赖于沉积温度,低于300℃沉积的薄膜是无定形的,300℃之上沉积的薄膜是锐钛矿结构。

Preparation of nano TiO2 thin films by plasma-enhanced chemical vapor deposition method

Nano TiO₂ thin film produced by plasma-enhanced chemical vapor deposition method are deposited on the silicon substrate with the mixture of TiCl₄ sources, argon and oxygen gases. Some technological parameters affecting the film performances are discussed. The results indicate that the surface of TiO₂ film is even, its crystal structure is compact and the smallest crystal grain size is approximately 15 nm. The film crystal form change mainly relies on the deposition temperature. The film is amorphous for temperature lower than 300 ℃ and shows the anatase structure above the deposition temperature of 300 ℃.