| Annealing effect on magnetic anisotropy in ultrathin（Ga,Mn）As |
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| 引用本文： | 李炎勇,汪华锋,曹玉飞,王开友.Annealing effect on magnetic anisotropy in ultrathin（Ga,Mn）As[J].中国物理 B,2013,22(2):27504-027504. |
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| 作者姓名： | 李炎勇 汪华锋 曹玉飞 王开友 |
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| 作者单位： | The State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| 基金项目： | Project supported by the National Basic Research Program of China (Grant No. 2011CB922200);the National Natural Science Foundation of China (Grant No. 11174272);the Engineering and Physical Sciences Research Council-National Natural Science Foundation Joint (Grant No.10911130232/A0402);Wang Kai-You acknowledges support of the Chinese Academy of Sciences’“100 Talent Program.” |
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| 摘 要： | We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga0.94Mn0.06As devices by measuring the angle-dependent planar Hall resistance(PHR).Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields(below 1000 Gs,1 Gs = 10-4 T),which can be explained by competition between Zeeman energy and magnetic anisotropic energy.It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga0.94Mn0.06As and the annealed one.The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing.This gives a useful way to tune the magnetic anisotropy of ultrathin(Ga,Mn)As devices.
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| 关 键 词： | 磁各向异性 退火效应 超薄 Ga Mn 单轴各向异性 测量范围 低温退火 |
| 收稿时间： | 2012-09-18 |
Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As |
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| Li Yan-Yong,Wang Hua-Feng,Cao Yu-Fei,Wang Kai-You.Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As[J].Chinese Physics B,2013,22(2):27504-027504. |
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| Authors: | Li Yan-Yong Wang Hua-Feng Cao Yu-Fei Wang Kai-You |
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| Institution: | The State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga0.94Mn0.06As devices by measuring the angle-dependent planar Hall resistance (PHR). Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields (below 1000 Gs, 1 Gs=10-4 T), which can be explained by competition between Zeeman energy and magnetic anisotropic energy. It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga0.94Mn0.06As and the annealed one. The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing. This gives a useful way to tune the magnetic anisotropy of ultrathin (Ga,Mn)As devices. |
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| Keywords: | magnetic anisotropy planar Hall resistance ultrathin (Ga Mn)As |
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