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L_g=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n~+-GaN layer by MOCVD |
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| Institution: | Huang Jie;Li Ming;Tang Chak-Wah;Lau Kei-May;College of Engineering and Technology, Southwest University;Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology; |
| Abstract: | Ga N HEMTs S/D（S/D） regrowth MOCVD |
| Keywords: | Ga N HEMTs S/D（S/D） regrowth MOCVD |
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