| Nucleation of GaSb on GaAs （001） by low pressure metal-organic chemical vapor deposition |
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| 引用本文： | 王连锴,刘仁俊,杨皓宇,吕游,李国兴,张源涛,张宝林.Nucleation of GaSb on GaAs （001） by low pressure metal-organic chemical vapor deposition[J].中国物理 B,2014(8):579-585. |
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| 作者姓名： | 王连锴 刘仁俊 杨皓宇 吕游 李国兴 张源涛 张宝林 |
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| 作者单位： | State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China(Grant No.61076010);the State Key Laboratory Program on Integrated Optoelectronics,China(Grant No.IOSKL2012ZZ13) |
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| 摘 要： | The initial growth stage of GaSb on GaAs(001) by low pressure metal–organic chemical vapor deposition(MOCVD)is investigated. The dependence of the nucleation on growth temperature, growth pressure, and vapor V/III ratio is studied by means of atomic force microscopy. The nucleation characteristics include the island density, size, and size uniformity distribution. The nucleation mechanism is discussed by the effects of growth temperature, growth pressure, and vapor V/III ratio on the density, size, and size uniformity of GaSb islands. With the growth temperature increasing from 500℃ to610℃ and the growth pressure increasing from 50 mbar to 1000 mbar(1 mbar = 105Pa), the island density first increases and then decreases; with the V/III ratio increasing from 0.5 to 3, the trend is contrary.
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| 关 键 词： | MOCVD GaSb nucleation |
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