Room-temperature ferromagnetism observed in Nd-doped In_2O_3 dilute magnetic semiconducting nanowires |
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| Institution: | 1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;2. Liaoyang Power Supply Branch, Liaoning Provincial Electric Power Corporation Limited, State Grid Corporation of China, Liaoyang 111000, China |
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| Abstract: | Nd-doped In_2O_3 nanowires were fabricated by an Au-catalyzed chemical vapor deposition method.Nd atoms were successfully doped into the In_2O_3 host lattice structure,as revealed by energy dispersive x-ray spectroscopy,x-ray photoelectron spectroscopy,Raman spectroscopy,and x-ray diffraction.Robust room temperature ferromagnetism was observed in Nd-doped In_2O_3 nanowires,which was attributed to the long-range-mediated magnetization among Nd~(3+)-vacancy complexes through percolation-bound magnetic polarons. |
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| Keywords: | dilute magnetic semiconductor nanowires ferromagnetism oxide |
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