| Abnormal physics of group-Ⅱ telluride system:valence contribution of d electrons |
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| 引用本文： | 段鹤,董有忠,黄燕,陈效双.Abnormal physics of group-Ⅱ telluride system:valence contribution of d electrons[J].中国物理 B,2011,20(4):43103-043103. |
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| 作者姓名： | 段鹤 董有忠 黄燕 陈效双 |
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| 作者单位： | [1]School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China [2]National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China [3]School of Physics, South China University of Technology, Guangzhou 510640, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant Nos. 10847111 and 61006091), the Startup Project for Ph. D. of Guangdong University of Technology (Grant No. 083034), and the Fundamental Research Funds for the Central Universities of South China University of Technology (Grant No. 2009ZM0022). |
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| 摘 要： | The physical trend of group-Ⅱ tellurides is unexpected and contrary to the conventional wisdom. The present first- principles calculations give fundamental insights into the extent to which group-Ⅱ telluride compounds present special properties upon mixing the d valence character. Our results provide explanations for the unexpected experimental observations based on the abnormal binding ordering of metal d electrons and their strong perturbation to the band edge states. The insights into the binary tellurides are useful for the study and control of the structural and chemical perturbation in their ternary alloys and heterostructures.
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| 关 键 词： | group-Ⅱ tellurides first-principles calculations electronic property tendency delocalized metal d states |
| 收稿时间： | 2010-10-17 |
Abnormal physics of group-II telluride system: valence contribution of d electrons |
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| Duan He,Dong You-Zhong,Huang Yan and Chen Xiao-Shuang.Abnormal physics of group-II telluride system: valence contribution of d electrons[J].Chinese Physics B,2011,20(4):43103-043103. |
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| Authors: | Duan He Dong You-Zhong Huang Yan and Chen Xiao-Shuang |
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| Institution: | School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China;National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;School of Physics, South China University of Technology, Guangzhou 510640, China;National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
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| Abstract: | The physical trend of group-II tellurides is unexpected and contrary to the conventional wisdom. The present first-principles calculations give fundamental insights into the extent to which group-II telluride compounds present special properties upon mixing the d valence character. Our results provide explanations for the unexpected experimental observations based on the abnormal binding ordering of metal d electrons and their strong perturbation to the band edge states. The insights into the binary tellurides are useful for the study and control of the structural and chemical perturbation in their ternary alloys and heterostructures. |
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| Keywords: | group-II tellurides first-principles calculations electronic property tendency delocalized metal d states |
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