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| GaAs与InP半导体光导开关特性实验研究 | |
| 引用本文： | 阮驰,赵卫,陈国夫,朱少岚,杨宏春,阮成礼.GaAs与InP半导体光导开关特性实验研究[J].光子学报,2007,36(3):405-411. |
| 作者姓名： | 阮驰 赵卫 陈国夫 朱少岚 杨宏春 阮成礼 |
| 作者单位： | 1. 中国科学院西安光学精密机械研究所,瞬态光学与光子技术国家重点实验室,西安,710119 2. 电子科技大学,物理电子学院,成都,610054 |
| 摘 要： | 利用Ⅲ-Ⅴ族化合物半导体材料砷化镓(GaAs)和磷化铟(InP)及其掺杂材料制作的光导开关具有很好的时间响应及高功率输出特性.比较了这两种材料制作的不同电极间隙类型的光导开关的开关时间响应速度、导通光能与饱和触发激光能量、线性与非线性工作模式及触发稳定性等特性.结果表明,利用InP和GaAs两种材料制作的光导开关都具有达到皮秒级的超快时间响应,其对时间最佳响应与偏置电场有关.两种开关的多次触发时间抖动在几个皮秒范围,输出电压峰峰值抖动优于10%.GaAs开关的非线性工作电场阈值比InP开关低,更容易实现非线性输出. |
| 关 键 词： | 光导开关 砷化镓 磷化铟 化合物半导体 |
| 文章编号： | 1004-4213（2007）03-0405-7 |
| 收稿时间： | 2006-08-14 |
| 修稿时间： | 2006-08-13 |
The Characteristics of GaAs and InP Photoconductive Semiconductor Switch |
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| RUAN Chi,ZHAO Wei,CHEN Guo-fu,ZHU Shao-lan,YANG Hong-chun,RUAN Cheng-li.The Characteristics of GaAs and InP Photoconductive Semiconductor Switch[J].Acta Photonica Sinica,2007,36(3):405-411. | |
| Authors: | RUAN Chi ZHAO Wei CHEN Guo-fu ZHU Shao-lan YANG Hong-chun RUAN Cheng-li |
| Institution: | (1 State Key Laboratory of Transient Optics and Photonics,Xi′an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences,Xi′an 710119,China) (2 University of Electronic Science and Technology of China,Chengdu 610054,China) |
| Abstract: | Ⅲ-Ⅴcompound semiconductors,such as Gallium arsenide (GaAs),Indium phosphide (InP) and their doped materials,are suitable to make high speed and high power PCSS with picosecond (ps) time response.Experiments are setup to compare the characteristics of the two materials,such as the time response speed,the trigger laser energy threshold of open and saturated state,the nonlinear operation mode and the output stability.The experimental results show that both two kinds of PCSS can achieve ps time response and ps time triggering jitter,and their voltage RMS jitters would be less than 10%.Compared with InP PCSS,the threshold of nonlinear mode bias field is low to GaAs PCSS,so it would work in this mode easily. |
| Keywords: | PCSS GaAs InP Compound semiconductor |
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