氢稀释对FTS沉积a-Si:H薄膜结构特性的影响

采用对靶磁控反应溅射技术,以氢气作为反应气体在不同的氢稀释比条件下制备了氢化非晶硅薄膜.利用台阶仪、傅里叶红外透射光谱、Raman谱和紫外-可见光透射谱测量研究了不同氢稀释比对氢化非晶硅薄膜生长速率和结构特性的影响.分析结果发现,利用对靶磁控溅射技术能够实现低温快速沉积高质量氢化非晶硅薄膜的制备.随着氢稀释比不断增加,薄膜沉积速率呈现先减小后增大的趋势.傅里叶红外透射光谱表明,氢化非晶硅薄膜中氢含量先增大后变小.而Raman谱和紫外-可见光透射谱分析发现,氢稀释比的增加使氢化非晶硅薄膜有序度和光学带隙均先增大后减小.可见,此技术通过改变氢稀释比R能够实现氢化非晶硅薄膜结构的有效控制.

Hydrogen Dilution Affect on Growth And Optical Properties of Amorphous Silicon (a-Si:H) Film with FTS

Hydrogenated amorphous silicon films were deposited by facing target sputtering with different hydrogen dilution ratio with H₂ as reaction gas.The growth rate and the optical properties of a-Si:H films with different hydrogen dilution ratio were characterized by surface profiler, Fourier-transform infrared spectroscopy, Raman scattering and ultraviolet-visible transmittance spectrum. It was found that, the low temperature and high deposition of a-Si:H films can be deposited by facing target sputtering method. With increasing hydrogen dilution, a trend that the deposition rate of a-Si:H films first decreases and then increases is showed. Fourier transform infrared transmission spectra show that hydrogen content of a-Si:H films increases first and then becomes smaller. While, through analysising the Raman spectra and UV-visible light transmission spectrum, the degree of order and the optical band gap also first increase and then decrease. Obviously, the film structure can be effectively controlled by the change of the hydrogen dilution with this technology.