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Ch. Zgheib E. Nassar M. Hamad R. Nader P. Masri J. Pezoldt G. Ferro 《Superlattices and Microstructures》2006,40(4-6):638
The effect of the germanium coverage prior to the epitaxial growth of 5 μm thick 3C-SiC on Si(100) substrates were evaluated with Atomic Force Microscopy and μ-Raman spectroscopy. The 3C-SiC layers were grown by atmospheric pressure chemical vapor deposition via a special procedure leading to layers with compressive instead of tensile stress. The Ge amount was varied from 0 up to 2 ML. The obtained results showed that the residual stress inside the layers is shifted in the compressive direction; the crystalline quality is improved with the Ge introduction but on the account of the surface roughness. These results open the route for the use of Ge-modified Si(100) as a potential substrate in order to improve the heteroepitaxial growth of 3C-SiC on silicon substrates. 相似文献
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B. SanduijavG. Springholz 《Applied Surface Science》2011,257(24):10465-10470
The self-assembly process of Ge islands on patterned Si (0 0 1) substrates is investigated using scanning tunneling microscopy. The substrate patterns consist of one-dimensional stripes with “V”-shaped geometry and sidewalls inclined by an angle of 9° to the (0 0 1) surface. Onto these stripes, Ge is deposited in a step-wise manner at different temperatures from 520 °C to 650 °C. At low temperature, the Ge first grows nearly conformally over the patterned surface but at about 3 monolayers a strong surface roughening due to reconstruction of the surface ridges as well as side wall ripple formation occurs. At 600 °C, a similar roughening takes place, but Ge accumulates within the grooves such that at a critical thickness of 4.5 monolayers, 3D islands are formed at the bottom of the grooves. This accumulation process is enhanced at 650 °C growth, so that the island formation starts about 1 monolayers earlier. At 600 and 650 °C, all islands are all aligned at the bottom of the stripes, whereas at 550 °C Ge island form preferentially on top of ridges. The experimental observations are explained by the strong temperature dependence of Ge diffusion over the patterned surface. 相似文献
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Single crystals of three new strontium nitridogermanates(IV) were grown in sealed niobium ampules from sodium flux. Dark red Sr4[GeN4] crystallizes in space group P21/c with a = 9.7923(2) Å, b = 6.3990(1) Å, c = 11.6924(3) Å and β = 115.966(1)°. Black Sr8Ge2[GeN4] contains Ge4– anions coexisting with [GeIVN4]8– tetrahedra and adopts space group Cc with a = 10.1117(4) Å, b = 17.1073(7) Å, c = 10.0473(4) Å and β = 115.966(1)°. Black Sr17Ge6N14 features the same anions alongside trigonal planar [GeIVN3]5– units. It crystallizes in P1 with a = 7.5392(1) Å, b = 9.7502(2) Å, c = 11.6761(2) Å, α = 103.308(1)°, β = 94.651(1)° and γ = 110.248(1)°. 相似文献
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枸椽酸锗能明显提高小鼠血清溶血素抗体水平,增强二硝基氯苯(DNCB)致小鼠迟发型皮肤过敏反应。增加小鼠免疫器官胸腺和脾脏的重量,表明枸椽酸锗能增强小鼠体液免疫和细胞免疫水平。 相似文献
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元素在石墨炉内石墨探针表面上的原子化机理研究:Ⅶ.锗的原子化机理 总被引:2,自引:0,他引:2
本文应用X-射线衍射,X-射线光电子能谱,俄歇电子能谱和其它一些实验,考察石墨炉升温过程中氟化锗,锗酸钠在石墨探针表面上的形态变化,阐明了它们的原子化机理:GeF2与Na2GeO3首先分解为GeO2,GeO2还原为GeO,后者在>2400K热分解产生自由态的锗原子,GeF2和Na2GeO3的原子化均源于GeO(g)的气相分解。原子化的升温过程中,在1400-2400K GeF2和Na2GeO3都产 相似文献
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应用示波极谱吸附波测定药物中锗 总被引:2,自引:0,他引:2
在pH2~6的硫酸介质中,锗(Ⅳ)、锑(Ⅲ)和钼(Ⅵ)形成三元杂多酸,此三元杂多酸在0.24mol/L的H2SO4中能迅速在滴汞电极上还原而产生灵敏的极谱电流,其峰电位为-0.35V(vs,SCE),测定下限是2×10^-9mol/L。用药用进行加标准回收实验,误差在10%之内,满足微量分析的要求。 相似文献
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The preparations and spectroscopic characteristics are reported of a series of (trimethylgermyl)methyl- and (trimethylstannyl)methylplatinum(II) complexes with diene and P-donor ancillary ligands, cis-Pt(CH2GeMe3)2L2 (L = PPh3 or PPh2Me; L2 = dppe or cod) and cis-Pt(CH2SnMe3)2L2 (L = PPh3; L2 =cod). Thermolysis of toluene solutions of cis-Pt(CH2GeMe3)2(PPh3)2 leads to cis-Pt(Me)(CH2GeMe2CH2GeMe3)(PPh3)2 via β-alkyl migration, after (non-rate-limiting) phosphine dissociation. Estimated activation parameters (ΔH298 K‡ = 126 ± 3 kJ mol−1, ΔS‡ = + 17 ± 7 J mol−1 K−1 and hence Δ298 K‡ = 121 ± 5 kJ mol−1) suggest that this system is more migration labile than its silicon analogue, primarily as a result of a lower activation enthalpy. While cis-Pt(CH2GeMe3)2(PPh2Me)2 reacts similarly but less readily, Pt(CH2GeMe3)2(dppe)2 is inert at operable temperatures. Thermolysis of Pt(CH2GeMe3)2(cod) generates 1,1,3,3,-tetramethyldi-1,3-germacyclobutane as the major organogermanium product, while from cis-Pt(CH2SnMe3)2(PPh3)2, 1,1,3,3-tetramethyldi-1,3-stannacyclobutane predominates. Mechanistic implications are discussed. 相似文献