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Growth and characteristics of hydrogenated In-doped ZnO thin films by pulsed DC magnetron sputtering |
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| Authors: | Young Ran Park Young Sung Kim |
| Institution: | a Department of Advanced Technology Fusion, Konkuk University, 1 Hwayang-dong, Gwangjin-ku, Seoul 143-701, Republic of Korea b Device Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong P.O. Box 107, Daejeon 305-600, Republic of Korea c Advanced Material Process of Information Technology, Sungkyunkwan University, Suwon 440-746, Republic of Korea |
| Abstract: | We investigated the role of hydrogen impurities in highly oriented In-doped ZnO (IZO:H) films. The conductivity of ZnO:H films exhibit small variation despite the increase of hydrogen ratio. The small variation of the carrier concentration in IZO:H films can be explained by the reduction of the oxygen deficiency for the charge neutrality and the increase of Vzn-H bonding for partially charge compensation in the films. The additional mode at 573 cm−1 is interpreted as vacancy clusters. The discrepancy between the increase of vacancy clusters (573 cm−1) and small variation of carrier concentration is attributed to the different physical characteristics of the IZO:H films due to the hydrogen existence between bulk and surface. The measured FT-IR peak at 3500 cm−1 exhibits typical characteristic of O-H bonding. |
| Keywords: | Zinc oxide (ZnO) In-doped Hydrogen effect Film FT-IR Micro Raman |
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