Hydrogen-induced metallization on Ge(1 1 1) c(2 × 8) |
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Authors: | IC Razado HM Zhang GV Hansson RIG Uhrberg |
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Institution: | Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden |
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Abstract: | We have studied hydrogen adsorption on the Ge(1 1 1) c(2 × 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which clearly indicates a charge transfer from the rest atom states to the adatom states. The surface states near the Fermi-level have been followed by ARPES as function of H exposure. Initially, there is strong emission from the rest atom states but no emission at the Fermi-level which confirms the semiconducting character of the c(2 × 8) surface. With increasing H exposure a structure develops in the close vicinity of the Fermi-level. The energy position clearly indicates a metallic character of the H-adsorbed surface. Since the only change in the STM images is the increased brightness of the adatoms neighbouring a H-terminated rest atom, we identify the emission at the Fermi-level with these adatom states. |
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Keywords: | 68 37 Ef 79 60 Dp 68 35 Bs 68 43 Fg |
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