Temperature-dependent ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films |
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Authors: | Shan-Tao Zhang Zhong Chen Guo-Liang Yuan |
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Institution: | a National Laboratory of Solid State Microstructures & Department of Materials Science and Engineering, Nanjing University, Hankou Road 22#, Nanjing 210093, Jiangsu, PR China b Department of Materials Science and Engineering, Nanjing University of Science and Technology, 210094, PR China |
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Abstract: | To investigate temperature-dependent ferroelectric and dielectric properties of ferroelectric films, Bi3.25La0.75Ti3O12 (BLT) thin films were prepared on Pt-coated silicon substrates by pulsed laser deposition. The ferroelectric and dielectric behaviors have been studied in a wide temperature range from 80 K to room temperature. The saturated polarization (Psat) decreases with decreasing temperature and decreasing electric field, whereas remnant polarization (Pr) shows a more complex temperature dependence. These results, which can be well explained based on a temperature-dependent charged defects-domain wall interaction model, might be helpful for further understanding the domain switching behavior. Based on these results, an alternative way to investigate temperature-dependent ferroelectric fatigue is proposed and experimentally carried out. The measured fatigue rate is found to be linearly dependent on temperature, consistent with the report on Pb(Zr,Ti)O3 films. Temperature-dependent dielectric measurements of the films further confirm the above explanation. |
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Keywords: | 77 84 Dy 77 80 Dj 68 65 +g |
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