Effects of annealing time on infrared emissivity of the Pt film grown on Ni alloy |
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Authors: | Zhibin Huang Wancheng Zhou Xiufeng Tang |
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Institution: | State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China |
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Abstract: | Platinum films were sputter-deposited on polished nickel alloy substrates. The platinum thin films were applied to serve as low-emissivity layers to reflect thermal radiation. The platinum-coated samples were then heated in the air at 600 °C to explore the effects of annealing time on the emissivity of platinum films. The results show that the grain size of the Pt films increased with the increasing annealing time while their dc electrical resistivity decreased. Besides, the IR emissivitiy of the films gradually decreased with the increasing annealing time. Especially, when the annealing time reached 150 h, the average IR emissivity at the wavelength of 3-14 μm was only about 0.1. Moreover, the chemical analysis indicated that the Pt films on Ni-based alloy exhibit a good resistance against oxidation at 600 °C. |
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Keywords: | 81 05 zx 61 80 Ba 68 60 &minus p 66 30 Ny |
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