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Catalyst-free growth of well-aligned arsenic-doped ZnO nanowires by chemical vapor deposition method |
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| Authors: | QJ Feng LZ Hu Y Feng JC Sun MK Li |
| Institution: | a School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, China b School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China c School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052, China |
| Abstract: | ZnO nanowires with different arsenic concentration were grown on Si (1 0 0) substrates by chemical vapor deposition method without using catalyst. Zn/GaAs mixed powders were used as Zn and As source, respectively. Oxygen was used as oxidant. The images of scanning electron microscope show that the arsenic-doped ZnO nanowires with preferred c-axial orientation were obtained, which is in well accordance with the X-ray diffraction analysis. The arsenic related acceptor emission was observed in the photoluminescence spectra at 11 K for all arsenic-doped ZnO samples. This method for the preparation of arsenic-doped ZnO nanowires may open the way to realize the ZnO nanowires based light-emitting diode and laser diode. |
| Keywords: | ZnO nanowires Arsenic Chemical vapor deposition Photoluminescence |
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