Fabrication of high hole-carrier density p-type ZnO thin films by N-Al co-doping |
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Authors: | Zhang Xiaodan Fan Hongbing Zhao Ying Wei Changchun |
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Institution: | a Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Tianjin 300071, China b College of Information Engineering, Hebei University of Technology, Tianjin 300130, China |
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Abstract: | In order to obtain p-type ZnO thin films, effect of atomic ratio of Zn:N:Al on the electronic and structural characteristic of ZnO thin films was investigated. Hall measurement indicated that with the increase of Al doping, conductive type of as-grown ZnO thin films changed from n-type to p-type and then to n-type again, reasons are discussed in details. Results of X-ray diffraction revealed that co-doped ZnO thin films have similar crystallization characteristic (0 0 2 preferential orientation) like that of un-doping. However, SEM measurement indicated that co-doped ZnO thin films have different surface morphology compared with un-doped ZnO thin films. p-type ZnO thin films with high hole concentration were obtained on glass (4.6 × 1018 cm−3) and n-type silicon (7.51 × 1019 cm−3), respectively. |
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Keywords: | 68 55 &minus a 73 61 Ga 78 55 Et |
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