GeSbTe deposition for the PRAM application |
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| Authors: | Junghyun Lee Changsoo Lee Daeil Kim |
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| Institution: | a Nano Fabrication Center, SAIT, Suwon, P.O. Box 111, Republic of Korea
b School of Materials Science and Engineering. University of Ulsan, San 29, Mugeo-Dong, Nam-Gu, Ulsan 680-749, Republic of Korea |
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| Abstract: | GeSbTe (GST) chalcogenide thin films for the phase-change random access memory (PRAM) were deposited by an atomic layer deposition (ALD) process. New precursors for GST thin films made with an ALD process were synthesized. Among the synthesized precursors, Ge(N(CH3)2)4, Sb(N(CH3)2)4, and Te(i-Pr)2 (i-Pr = iso-propyl) were selected. Using the above precursors, GST thin films were deposited using an H2 plasma-assisted ALD process. Film resistivity abruptly changed after an N2 annealing process above a temperature of 350 °C. Cross-sectional scanning electron microscope (SEM) photographs of the GST films on the patterned substrate with aspect ratio of 7 shows that the step coverage is about 90%. |
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| Keywords: | 81 05Gc 81 15 Gh 61 10 Nz |
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