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Low‐temperature growth of high quality AlN films on carbon face 6H‐SiC
Authors:Myunghee Kim  Jitsuo Ohta  Atsushi Kobayashi  Masaharu Oshima
Institution:1. Department of General Systems Studies, The University of Tokyo, 3‐8‐1 Komaba, Meguro‐ku, Tokyo 153‐8902, Japan;2. Institute of Industrial Science (IIS), The University of Tokyo, 4‐6‐1 Komaba, Tokyo 153‐8505, Japan;3. Kanagawa Academy of Science and Technology (KAST), 3‐2‐1 Sakado, Kawasaki 213‐0012, Japan;4. Department of Applied Chemistry, The University of Tokyo, 4‐3‐1 Hongo, Tokyo 113‐8656, Japan;5. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Chiyoda‐ku, Tokyo 102‐0075, Japan
Abstract:
Keywords:61  05  cp  61  05  jh  68  55  ag  81  05  Ea  81  15  Fg  99  10  Cd
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