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化学溶液沉积法制备涂层导体SmBiO3(SBO)缓冲层的研究
引用本文:张欣,蒲明华,张红,雷鸣,张勇,赵勇.化学溶液沉积法制备涂层导体SmBiO3(SBO)缓冲层的研究[J].低温物理学报,2011(4):246-249.
作者姓名:张欣  蒲明华  张红  雷鸣  张勇  赵勇
作者单位:材料先进技术教育部重点实验室磁浮技术与磁浮列车教育部重点实验室西南交通大学超导研究开发中心
基金项目:国家自然科学基金(批准号:50372052,50588201);国家重大基础研究项目(973)(批准号:2007CB616906);长江学者和创新团队发展计划项目(批准号:IRT0751)资助的课题~~
摘    要:通过740-820℃之间进行低温成相,分别在氩气和空气中LaAlO3(LAO)单晶基底上沉积得到了有较大应用前景的涂层导体SmBiO3(SBO)缓冲层.740-800℃所得的缓冲层c轴取向良好,致密、平整、无裂纹.当温度达到820℃时,SBO表面开始出现裂缝.SBO薄膜的相组成和微结构利用XRD和SEM进行分析.研究结...

关 键 词:化学溶液沉积法  涂层导体  SmBiO3缓冲层

THE RESEARCH ON PREPARATION OF SBO BUFFER LAYERS FOR COATED CONDUCTORS BY CHEMICAL SOLUTION DEPOSITED METHODS
G Xin,U Ming-hua,G Hong,I Ming,G Yong,HAO Yong.THE RESEARCH ON PREPARATION OF SBO BUFFER LAYERS FOR COATED CONDUCTORS BY CHEMICAL SOLUTION DEPOSITED METHODS[J].Chinese Journal of Low Temperature Physics,2011(4):246-249.
Authors:G Xin  U Ming-hua  G Hong  I Ming  G Yong  HAO Yong
Institution:Key Laboratory of Magnetic Levitation Technologies and Maglev Trains;Ministry of Education of China;and Superconductivity R&D Center(SRDC);Southwest Jiaotong University;Chengdu 610031
Abstract:Low annealing temperature processing has been achieved in the deposition of a potential SmBiO3(SBO) buffer layer on LaAlO3(LAO) single crystal substrate both in Ar and air.The temperature range as low as 740~820℃ was demonstrated to be appropriate to the epitaxial growth of SBO layer.Highly c-axis textured,dense,smooth and crack-free SBO layer has been obtained at 740~800℃.The SBO layer begins to crack when annealed at 820 ℃.the microstructure and phase composition of SBO film are characterized by using SEM and XRD.As results,the proper temperature both in Ar and air for the growth of SBO film is about 770~800℃,underwhich the dense and smooth SBO film can be well prepared.
Keywords:Chemical solution deposition  Coated conductor  SmBiO3 buffer layer
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