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低电场下LiNbO3薄膜在非晶衬底上的取向生长
引用本文:吴状春,胡卫生,刘俊明,王 牧,刘治国.低电场下LiNbO3薄膜在非晶衬底上的取向生长[J].物理学报,1998,47(2):239-244.
作者姓名:吴状春  胡卫生  刘俊明  王 牧  刘治国
作者单位:南京大学固体微结构物理国家重点实验室,南京 210093
摘    要:报道了外加低电场和衬底温度对脉冲激光淀积法制备的LiNbO3薄膜取向的影响.在衬底温度为600℃和外加电场为7V/cm的条件下,在石英玻璃等非晶态衬底上获得了完全(001)取向的LiNbO3薄膜.在对具有自发极化的LiNbO3在电场作用下成核生长机制和温度对LiNbO3自发极化强度的影响进行分析的基础上,给出了低电场诱导铁电薄膜取向生长的物理依据. 关键词

关 键 词:非晶衬底  铁电薄膜  低电场  铌酸锂  薄膜生长
收稿时间:6/9/1997 12:00:00 AM
修稿时间:8/6/1997 12:00:00 AM

ORIENTED GROWTH OF LiNbO3 THIN FILMS ON AMORPHOUS SUBSTRATES IN A LOW ELECTRIC FIELD
WU ZHUANG-CHUN,HU WEI-SHENG,LIU JUN-MING,WANG MU and LIU ZHI-GUO.ORIENTED GROWTH OF LiNbO3 THIN FILMS ON AMORPHOUS SUBSTRATES IN A LOW ELECTRIC FIELD[J].Acta Physica Sinica,1998,47(2):239-244.
Authors:WU ZHUANG-CHUN  HU WEI-SHENG  LIU JUN-MING  WANG MU and LIU ZHI-GUO
Abstract:Both the strength of an applied biased electrical field and the substrate temperature were found to have significant effect on the oriented growth of LiNbO3 thin films prepared by pulsed laser deposition technique.At a substrate temperature of 600℃ and an applied electrical field of 7V/cm,completely (001) oriented LiNbO3 films were deposited on silica and other amorphous substrates successfully.The physical background of the oriented growth of ferroelectrical films induced by low electric field was analyzed in terms of nucleation and growth theory of ferroelectrics with spontaneous polarization in electrical field and the deposition temperature effect on the intensity of spontaneous polarization of the ferroelectrics.
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