a-Si:H中杂质和缺陷态的电子统计理论

本文对a-Si:H中掺杂和缺陷机制提出了一个多能级模型,并应用了统计物理学的方法计算了a-Si:H的掺杂效率η。所得结果,不仅包括了street等人在此问题的全部讨论,而且还区分了重掺杂与轻掺杂有所不同,轻掺杂时的η与正常情况讨论一致,只有重掺杂时才出现η∝?^-1/2规律。 关键词：

STATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H

This article present a multi-level model on the doping mechanism and defect state in the gap of a-Si:H films, and calcnlate the doping efficiency η using the method of statistical physics. It was found that the results from the model and calculation not only cover all arguments of Street et al., but also make a distinction between heavy and light doping. The η of light doping agrees with usual results, only heavy doping obeys η∝?^-1/2low.
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