| 高电荷态离子与Si(110)晶面碰撞的沟道效应研究 |
| |
| 引用本文： | 彭海波,王铁山,韩运成,丁大杰,徐鹤,程锐,赵永涛,王瑜玉.高电荷态离子与Si(110)晶面碰撞的沟道效应研究[J].物理学报,2008,57(4):2161-2164. |
| |
| 作者姓名： | 彭海波 王铁山 韩运成 丁大杰 徐鹤 程锐 赵永涛 王瑜玉 |
| |
| 作者单位： | (1)兰州大学核科学与技术学院，兰州 730000; (2)中国科学院近代物理研究所，兰州 730000 |
| |
| 基金项目： | 国家自然科学基金(批准号：10475035)资助的课题. |
| |
| 摘 要： | 不同电荷态低速离子(Arq+，Pbq+)轰击Si(110)晶面，测量不同入射角情况下的次级粒子的产额. 通过比较溅射产额与入射角的关系，证实沟道效应的存在. 高电荷态离子与Si相互作用产生的沟道效应说明溅射产额主要是由动能碰撞引起的. 在小角入射条件下，高电荷态离子能够增大溅射产额. 当高电荷态离子以40°—50°入射时，存在势能越高溅射产额越大的势能效应.
关键词：
高电荷态离子
溅射
沟道效应
|
| 关 键 词： | 高电荷态离子 溅射 沟道效应 |
| 收稿时间： | 2007-07-12 |
| 修稿时间： | 2007年7月12日 |
Study of channeling effect by impact of highly charged ions on crystal surface of Si(110) |
| |
| Peng Hai-Bo,Wang Tie-Shan,Han Yun-Cheng,Ding Da-Jie,Xu He,Cheng Rui,Zhao Yong-Tao and Wang Yu-Yu.Study of channeling effect by impact of highly charged ions on crystal surface of Si(110)[J].Acta Physica Sinica,2008,57(4):2161-2164. |
| |
| Authors: | Peng Hai-Bo Wang Tie-Shan Han Yun-Cheng Ding Da-Jie Xu He Cheng Rui Zhao Yong-Tao and Wang Yu-Yu |
| |
| Abstract: | The (110) crystal surface of Si was bombarded by slow highly charged ions (Pbq+，Arq+) and the secondary particle emission was measured for different incident angles. Comparing the relationship between the sputtering yield and the incident angle, channeling effect was suggested. The channeling effect in interaction of highly charged ions with Si causes the sputtering yield to depend strongly on kinetic energy. Highly charged ions can enhance sputtering yield at smaller incident angles. At incident angles from 40° to 50°, the higher the potential energy of highly charged ion, the greater the sputtering yield. |
| |
| Keywords: | highly charged ions sputtering channeling effect |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
