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SETMOS实现多涡卷蔡氏电路的研究
引用本文:冯朝文,蔡理,张立森,杨晓阔,赵晓辉.SETMOS实现多涡卷蔡氏电路的研究[J].物理学报,2010,59(12):8426-8431.
作者姓名:冯朝文  蔡理  张立森  杨晓阔  赵晓辉
作者单位:空军工程大学理学院,西安 710051
基金项目:国家高技术研究发展计划(批准号:2008AAJ225)资助的课题.
摘    要:基于细胞神经网络结构,利用具有负微分电阻特性的单电子晶体管与金属氧化物半导体混合结构器件SETMOS实现了多涡卷蔡氏电路.对该电路系统的基本动力学特性(如相图、分岔图、Lyapunov指数、Poincaré映射和功率谱)进行了理论分析和数值仿真,并利用电路仿真实验验证了该三阶四涡卷蔡氏电路设计的正确性和可行性.研究结果表明,SETMOS的负微分电阻特性决定着多涡卷蔡氏电路的复杂动力学行为,而且所设计的电路结构简单易行.

关 键 词:单电子晶体管  负微分电阻  多涡卷  分岔
收稿时间:2009-12-18

Implementation of multi-scroll Chua's circuit by hybrid single electron transistor and metal oxide semiconductor structure
Feng Chao-Wen,Cai Li,Zhang Li-Sen,Yang Xiao-Kuo,Zhao Xiao-Hui.Implementation of multi-scroll Chua''s circuit by hybrid single electron transistor and metal oxide semiconductor structure[J].Acta Physica Sinica,2010,59(12):8426-8431.
Authors:Feng Chao-Wen  Cai Li  Zhang Li-Sen  Yang Xiao-Kuo  Zhao Xiao-Hui
Institution:College of Science, Air Force Engineering University, Xi’an 710051, China
Abstract:Based on the structure of cellular neural network, multi-scroll Chua’s circuit is implemented by the nanoelectronic device of hybrid single electron transistor and metal oxide semiconductor (SETMOS) structure with its negative differential resistance characteristic. The basic dynamical properties, including phase portrait, bifurcation diagram, Lyapunov exponent spectrum, Poincaré mapping and power spectrum are studied by theoretic analysis and numerical simulation. The validity and the feasibility of three-order Chua’s circuit with four scrolls are further confirmed by the circuit simulation experiment. Finally, the results show that the negative differential resistance characteristic of SETMOS determines complex dynamical behaviors of multi-scroll Chua’s circuit. Also, the designed circuit has simple structure and is easy to realize.
Keywords:single electron transistor  negative differential resistance  fitting  multi-scroll
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